3-D and 3-D schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same
View Patent ↗A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.
1. An apparatus comprising:
an epitaxial prominence disposed upon a film, the epitaxial prominence having a top and vertical sides;
a conductive container disposed to envelop the epitaxial prominence such that the conductive container contacts the top and the vertical sides of the epitaxial prominence;
an electrode disposed above and on the container conductor; and
a variable-resistance material memory (VRMM) cell coupled to the electrode with the variable-resistance material memory (VRMM) cell above and contacting the electrode such that the electrode is between the variable-resistance material memory (VRMM) cell and the conductive container.
2. The apparatus of claim 1 , wherein the conductive container is a metal derived from a lid and a spacer cylinder.
3. The apparatus of claim 1 , wherein the conductive container is a semiconductive material derived from a lid and a spacer cylinder.
4. The apparatus of claim 1 , wherein the film is an n-doped semiconductive material that is disposed on a p-doped semiconductive substrate, and wherein the epitaxial prominence is an n-doped semiconductive material.
5. The apparatus of claim 1 , wherein the conductive container is a metal derived from a lid and a spacer cylinder, wherein the film is an n-doped semiconductive material that is disposed on a p-doped semiconductive substrate, and wherein the epitaxial prominence is an n-doped semiconductive material.
6. The apparatus of claim 1 , wherein the VRMM cell is part of a computer system.
7. The apparatus of claim 1 , wherein the VRMM cell includes a phase-change chalogenide cell.
8. The apparatus of claim 1 , wherein the apparatus includes a top electrode on the VRMM cell coupling the VRMM cell to a bit line.
9. The apparatus of claim 8 , wherein the top electrode includes titanium nitride.
10. The apparatus of claim 1 , wherein the epitaxial prominence, the conductive container, and the electrode are disposed in a dielectric.
11. The apparatus of claim 1 , wherein the apparatus includes a word line strap coupled to the VRMM cell through a word line contact.
12. A process comprising:
forming an epitaxial prominence upon a film, the epitaxial prominence having a top and vertical sides;
forming a container conductor conformally over the epitaxial prominence, the container conductor disposed to envelop the epitaxial prominence such that the conductive container contacts the top and the vertical sides of the epitaxial prominence;
forming an electrode disposed above and on the container conductor, the conductive container contacting the top and the vertical sides of the epitaxial prominence; and
coupling the electrode to a variable-resistance material memory (VRMM) cell with the variable-resistance material memory (VRMM) cell above and contacting the electrode such that the electrode is between the variable-resistance material memory (VRMM) cell and the container conductor.
13. The process of claim 12 , wherein the container conductor is a metal and wherein forming the container conductor includes:
forming a nitride film over the film;
forming a dielectric first film over the nitride film;
patterning and etching a recess through the dielectric first film and the nitride film to stop on the film;
forming the epitaxial prominence;
forming a conductive first film above and on the epitaxial prominence; and
forming a conductive spacer second film on the epitaxial prominence, wherein the conductive first film and the conductive spacer second film form the container conductor.
14. The process of claim 12 , wherein coupling the electrode to the VRMM cell further includes:
forming a top electrode to contact the VRMM cell; and
coupling the top electrode to a bit line.
15. The process of claim 12 , wherein forming the container conductor includes:
forming a nitride film over the film;
forming a dielectric first film over the nitride film;
patterning and etching a recess through the dielectric first film and the nitride film to stop on the film;
forming the epitaxial prominence;
conformally forming the container conductor by a process of chemical vapor deposition upon the epitaxial prominence.
16. The process of claim 12 , wherein forming the container conductor includes:
forming a nitride film over the film;
forming a dielectric first film over the nitride film;
patterning and etching a recess through the dielectric first film and the nitride film to stop on the film;
forming the epitaxial prominence, wherein the epitaxial prominence is an n-doped semiconductive material;
forming a metal first film above and on the epitaxial prominence; and
forming a metal spacer second film on the epitaxial prominence, wherein the metal first film and the metal spacer second film form the container conductor.