Memory element and its method of formation
View Patent ↗A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
1. A method of forming a memory element comprising:
forming a first electrode layer over a semiconductor substrate;
forming a dielectric layer over at least a portion of said first electrode layer;
forming a first chalcogenide glass layer over said dielectric layer;
forming a metal-selenide layer over at least a portion of said first chalcogenide glass layer;
forming a second chalcogenide glass layer over at least a portion of said metal-selenide layer;
forming a metal-containing layer over at least a portion of said second chalcogenide glass layer; and
forming a second electrode layer over at least a portion of said metal-containing layer, wherein said first and second electrode layers are in electrical communication with each other.
2. The method of claim 1 , wherein said metal-containing layer is formed having a thickness of between about 50 Å to about 250 Å.
3. The method of claim 1 , wherein said metal-selenide layer is about 1 to about 5 times thicker than said first chalcogenide glass layer.
4. The method of claim 1 , wherein said metal-containing layer comprises silver.
5. The method of claim 1 , wherein said metal-containing layer is a metal-selenide layer.
6. The method of claim 1 , wherein said metal-selenide layer is about 1 to about 5 times thicker than said second chalcogenide glass layer.
7. A method of forming a memory element between two conductive electrodes, said method comprising:
forming a first glass layer comprising a chalcogen;
forming a metal-selenide layer over said first glass layer;
forming a second glass layer comprising a chalcogen over said metal-selenide layer; and
forming a metal-containing layer over said second glass layer.
8. The method of claim 7 , wherein said second metal-containing layer is formed to be about 50 Å to about 250 Å thick.
9. The method of claim 7 , wherein said metal-selenide layer is formed to be about 1 to about 5 times thicker than said first chalcogenide glass layer.
10. The method of claim 7 , wherein said metal-containing layer comprises silver.
11. The method of claim 7 , wherein said metal-containing layer comprises a metal-selenide.
12. A method of forming a memory element between two electrodes comprising:
forming a first and second glass layer, wherein at least one glass layer is in electrical communication with at least one electrode;
forming a metal-selenide layer between said first and second glass layers, wherein said second glass layer is formed over at least a portion of said metal-selenide layer; and
forming a metal-containing layer on one side of said second glass layer, wherein said metal-selenide layer is formed on the opposite side of said second glass layer.
13. The method of claim 12 , wherein said first and second glass layers are chalcogenide glass layers.
14. The method of claim 13 , wherein said metal-selenide layer is about 1 to about 5 times thicker than said second glass layer.
15. The method of claim 12 , wherein said metal-containing layer is formed having a thickness of between about 50 Å to about 250 Å.
16. The method of claim 12 , wherein said metal-selenide layer is about 1 to about 5 times thicker than said first glass layer.
17. The method of claim 12 , wherein said metal-containing layer comprises silver.
18. The method of claim 12 , wherein said metal-containing layer is a metal-selenide layer.