Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry
View Patent ↗A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR) 3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
1. A method of depositing a phase-change material onto a substrate, comprising:
providing a vaporized compound consisting of Sb(OR) 3 to a substrate, where R is alkyl;
providing a reducing agent to the substrate;
utilizing the Sb(OR) 3 to form an antimony-comprising phase change material comprising no greater than 10 atomic percent oxygen.
2. The method of claim 1 wherein the phase change material comprises at least one additional metal.
3. The method of claim 1 wherein the reducing agent and the Sb(OR) 3 are provided at the same time.
4. The method of claim 3 wherein the reducing agent comprises one or more member of the group consisting of NH 3 , CH 2 O and CH 2 O 2 .
5. The method of claim 1 wherein the phase change material further comprises at least one of Ge and Te.
6. The method of claim 1 wherein the forming utilizes chemical vapor deposition.
7. The method of claim 1 wherein the forming the phase change material comprises:
forming a monolayer comprising Sb(OR)x onto the substrate, where x is less than 3; and
after forming the monolayer, providing the reducing agent to the monolayer to remove any OR ligand from the Sb.
8. A method of forming phase change memory circuitry, comprising:
forming an electrode material over the substrate;
providing a vaporized compound consisting of Sb(OR) 3 over the electrode material, where R is alkyl;
providing a reducing agent to the substrate;
forming an Sb-comprising phase change material utilizing the Sb(OR) 3 over the electrode material, the phase change material comprising less than 10 atomic percent oxygen; and
forming an outer electrode material over the phase change material.
9. The method of claim 8 the providing the reducing agent comprises providing the reducing agent over the electrode material.
10. The method of claim 9 wherein the Sb(OR) 3 and the reducing agent are provided at the same time.
11. The method of claim 9 wherein the reducing agent is provided after the Sb(OR) 3 .
12. The method of claim 8 wherein the phase change material comprises at least one additional metal.
13. The method of claim 12 wherein the at least one additional metal is selected from Te and Ge.