Memory cells and methods of forming memory cells
Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.
1. A method of forming a memory cell, comprising:
forming a first ovonic material over a first electrode material, the first ovonic material joining the first electrode material at a first interface;
forming a second electrode material over the first ovonic material, the first ovonic material joining the second electrode material at a second interface;
forming a second ovonic material over the second electrode material, the second ovonic material joining the second electrode material at a third interface;
forming a third electrode material over the second ovonic material, the second ovonic material joining the third electrode material at a fourth interface; one of the first and second ovonic materials being an ovonic memory material, and the other of the first and second ovonic materials being an ovonic threshold switch material; and
implanting dopant into the first and second ovonic materials, and into the first, second and third electrodes to form damage regions extending across the first, second, third and fourth interfaces and to improve adhesion of the ovonic materials and electrode materials across said interfaces.
2. The method of claim 1 wherein the first electrode extends through an electrically insulative material, wherein another interface is between the first ovonic material and the electrically insulative material; and further comprising forming a damage region across said other interface with the implanted dopant to improve adhesion of the first ovonic material to the electrically insulative material.
3. The method of claim 1 wherein the ovonic memory material comprises one or more of germanium, antimony, tellurium and indium.
4. The method of claim 1 wherein the ovonic threshold switch material comprises one or more of germanium, arsenic, selenium, tellurium and silicon.
5. The method of claim 1 wherein the first ovonic material is the ovonic memory material and the second ovonic material is the ovonic threshold switch material.
6. The method of claim 1 wherein the first ovonic material is the ovonic threshold switch material and the second ovonic material is the ovonic memory material.
7. The method of claim 1 wherein the dopant comprises BF 2 + .