Methods of forming electrical components and memory cells
View Patent ↗Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface configuration, and with a second of the domains being induced by the second surface configuration. A second structure is then formed over the material. The first domains of the material are incorporated into electrical components. The second domains may be replaced with dielectric material to provide isolation between adjacent electrical components, or may be utilized as intervening regions between adjacent electrical components.
1. A method of forming a plurality of memory cells, comprising:
forming a semiconductor substrate to have a first series of electrically conductive lines spaced from one another by dielectric regions; the electrically conductive lines of the first series extending primarily along a first direction; the substrate having an upper surface comprising surfaces of the electrically conductive lines;
forming alternating first and second surface configurations along the surfaces of individual electrically conductive lines;
forming memory cell material across the semiconductor substrate; the memory cell material comprising two or more domains; a first of the domains being induced by the first surface configuration, and a second of the domains being induced by the second surface configuration;
forming a second series of electrically conductive lines over the memory cell material; the first domains of the memory cell material being in regions of the memory cell material that are directly between electrically conductive lines of the first series and the electrically conductive lines of the second series, and the second domains of the memory cell material being in regions of the memory cell material that are not directly between electrically conductive lines of the first series and the electrically conductive lines of the second series.
2. The method of claim 1 wherein the memory cell material is the only material directly between the electrically conductive lines of the first series and the electrically conductive lines of the second series.
3. The method of claim 1 wherein the forming the alternating surface configurations along surfaces of the individual conductive lines comprises roughening regions of the electrically conductive lines.
4. The method of claim 1 wherein the forming the alternating surface configurations along surfaces of the individual conductive lines comprises forming topological recessions that extend into the electrically conductive lines.
5. The method of claim 1 wherein the forming the alternating surface configurations along surfaces of the individual conductive lines comprises chemically modifying segments of the electrically conductive lines.
6. The method of claim 1 wherein the forming the alternating surface configurations along surfaces of the individual conductive lines comprises forming a coating across segments of the electrically conductive lines.
7. The method of claim 1 wherein the second domains of the memory cell material remain after forming the second series of electrically conductive lines.
8. The method of claim 1 wherein the second domains of the memory cell material are removed prior to forming the second series of electrically conductive lines.
9. The method of claim 1 wherein the first and second surface configurations have different texturing relative to one another, and are the same in chemical composition as one another.
10. The method of claim 1 wherein the first and second surface configurations have different texturing relative to one another, and are different from one another in chemical composition.
11. The method of claim 1 wherein:
the upper surface of the semiconductor substrate also comprises surfaces of the dielectric regions; and
wherein the forming of the alternating surface configurations along the surfaces of the individual electrically conductive lines also forms alternating surface configurations along the surfaces of the dielectric regions.
12. The method of claim 11 wherein the forming of the alternating surface configurations along the surfaces of the individual electrically conductive lines and along the surfaces of the dielectric regions comprises texturing the segments of the electrically conductive lines and the dielectric regions.
13. The method of claim 11 wherein the forming of the alternating surface configurations along the surfaces of the individual electrically conductive lines and along the surfaces of the dielectric regions comprises forming a coating over segments of the electrically conductive lines and the dielectric regions.