Diode for variable-resistance material memories, processes of forming same, and methods of using same
View Patent ↗A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.
1. An apparatus comprising:
a diode plug disposed upon a second-patterned portion of a semiconductive film, wherein the diode plug contacts a first wall, a second wall, a third wall, and a fourth wall of the semiconductive film;
an electrode disposed above and on the diode plug;
a shallow-trench isolation (STI) adjacent to the Schottky diode; and
a variable-resistance material memory (VRMM) cell coupled to the electrode, wherein the variable-resistance material is a doped chalcogenide glass of A x B y , where B is one or more of sulfur, selenium, or tellurium and A is at least one element from B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, Cl, Br, I, or At with dopants of one or more of Au, Ag, Pt, Cu, Cd, In, Ru, Co, Cr, Ni, Mn, or Mo.
2. The apparatus of claim 1 , wherein the diode plug also contacts a floor that is an island second height in the semiconductive film.
3. The apparatus of claim 1 , wherein the first and second walls are a part of the second-patterned portion of the semiconductive film.
4. The apparatus of claim 3 , wherein the semiconductive film is an n-doped semiconductive material that is disposed upon a p-doped semiconductive substrate.
5. The apparatus of claim 3 , wherein the VRMM cell is part of a computer system.
6. The apparatus of claim 3 , wherein the semiconductive film is an n-doped semiconductive material that is disposed upon a p-doped semiconductive substrate, and wherein the diode plug also contacts a floor in the semiconductive film.
7. An apparatus comprising:
a diode plug disposed on a semiconductive film such that the diode plug and the semiconductive film form a Schottky diode;
a shallow-trench isolation (STI) adjacent to the Schottky diode;
an electrode disposed above and on the diode plug; and
a variable-resistance material memory (VRMM) cell coupled to the electrode, wherein the variable-resistance material is a doped chalcogenide glass of A x B y , where B is one or more of sulfur, selenium, or tellurium and A is at least one element from B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, Cl, Br, I, or At.
8. The apparatus of claim 7 , wherein the apparatus includes a word line strap coupled to the VRMM cell through a word line contact.
9. The apparatus of claim 8 , wherein the word line contact contacts the semiconductor film with the word line strap in a plane above the diode plug.
10. The apparatus of claim 7 , wherein the apparatus includes a bit line coupled to the VRMM cell.
11. The apparatus of claim 7 , wherein the variable-resistance material includes one or more of Pr( 1-x )Ca x MnO 3 (PCMO), La( 1-x )Ca x MnO 3 (LCMO), Ba( 1-x )Sr x TiO 3 , Al 2 O 3 , BaTiO 3 , SrTiO 3 , Nb 2 O 5 , SrZrO 3 , TiO 2 , Ta 2 O 5 , NiO, ZrO x , HfO x , Cu 2 O, or a doped chalcogenide glass.
12. The apparatus of claim 7 , wherein the diode plug comprises a metal.