Phase change current density control structure
View Patent ↗A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.
1. A single memory element comprising:
a first memory material;
a second memory material;
an insulating material separating at least a portion of the first and second memory materials; and
at least two openings in the insulating material allowing contact between the first and second memory materials to define the single memory element.
2. The memory element of claim 1 , wherein the first memory material comprises a chalcogenide material.
3. The memory element of claim 2 , wherein the first memory material comprises germanium-telluride.
4. The memory element of claim 1 , wherein the first memory material has a thickness of about 300 Å to about 500 Å.
5. The memory element of claim 1 , wherein the second memory material comprises a metal-chalcogenide material.
6. The memory element of claim 5 , wherein the second memory material comprises tin-telluride.
7. The memory element of claim 1 , wherein the second memory material has a thickness of about 500 Å to about 700 Å.
8. The memory element of claim 1 , wherein the insulating material comprises amorphous carbon.
9. The memory element of claim 1 , further comprising first and second electrodes, wherein the first and second memory materials are between the first and second electrodes.
10. The memory element of claim 1 , wherein the at least two openings are at least partially directly above the second electrode.
11. The memory element of claim 1 , wherein the at least two openings are configured to increase current density during operation of the element.
12. The memory element of claim 1 , wherein the at least two openings have a surface area less than a surface area of one of the first and second electrodes.
13. A memory device comprising:
a plurality of memory cells, at least one memory cell comprising:
a first memory material;
a second memory material;
an insulating material separating at least a portion of the first and second memory materials; and
at least two openings in the insulating material allowing contact between the first and second memory materials to define the single memory element.
14. The memory device of claim 13 , wherein the first memory material comprises a phase change material.
15. The memory device of claim 14 , wherein the phase change material comprises germanium-telluride.
16. The memory device of claim 13 , wherein the first memory material has a thickness of about 300 Å to about 500 Å.
17. The memory device of claim 13 , wherein the second memory material comprises a metal-chalcogenide material.
18. The memory device of claim 17 , wherein the metal-chalcogenide material comprises tin-telluride.
19. The memory device of claim 13 , wherein the metal-chalcogenide material has a thickness of about 500 Å to about 700 Å.
20. The memory device of claim 13 , wherein the insulating material comprises amorphous carbon.
21. The memory device of claim 13 , further comprising first and second electrodes, wherein the first and second memory materials are between the first and second electrodes.
22. The memory device of claim 13 , wherein the at least two openings have a surface area less than a surface area of the second electrode.