Patent Assignment
Reel/Frame 029076/0493
Assignment of Assignor's Interest
Recorded: 2012-10-04
Pages: 59
Assignor
STMICROELECTRONICS N.V.
Executed: 2012-04-25
Assignee
NUMONYX B.V.
A-ONE BIZ CENTER, Z.A. VERS LA PIECE RTE., DE I'ETRAZ, ROLLE, 1180, SWITZERLAND
Covered Properties
(34)
Process for Manufacturing a Dual Charge Storage Location Memory Cell
Method and Apparatus for on-Wafer Testing of an Individual Optical Chip
Single Supply Voltage, Nonvolatile Phase Change Memory Device with Cascoded Column Selection and Simultaneous Word Read/Write Operations
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Self-Repair Method via Ecc for Nonvolatile Memory Devices, and Relative Nonvolatile Memory Device
Circuit for Programming a Non-Volatile Memory Device with Adaptive Program Load Control
Method and Device for Programming an Electrically Programmable Non-Volatile Semiconductor Memory
Non-Volatile Memory Device with Improved Sequential Programming Speed
Electronic Apparatus and Method of Controlling Operation of the Same
Semiconductor Memory with Access Protection Scheme
Method of Programming a Multi-Level, Electrically Programmable Non-Volatile Semiconductor Memory
Full-Swing Wordline Driving Circuit
Phase -Change Memory Device with Biasing of Deselected Bit Lines
Process for Manufacturing a Dual Charge Storage Location Memory Cell
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Trimming Functional Parameters in Integrated Circuits
Page Buffer Circuit and Method for a Programmable Memory Device
Programmable Nand Memory
Process for Manufacturing an Array of Cells Including Selection Bipolar Junction Transistors
Dual Resistance Heater for Phase Change Devices and Manufacturing Method Thereof
Method of Making a Floating Gate Non-Volatile Mos Semiconductor Memory Device with Improved Capacitive Coupling and Device Thus Obtained
Method of Making a Floating Gate Non-Volatile Mos Semiconductor Memory Device with Improved Capacitive Coupling
Enhanced Security Memory Access Method and Architecture
Memory Device with a Ramp-Like Voltage Biasing Structure Based on a Current Generator
Vertical Mosfet Transistor, in Particular Operating as a Selector in Nonvolatile Memory Devices
Semiconductor Memory Device with Information Loss Self-Detect Capability
Circuit and Method for Retrieving Data Stored in Semiconductor Memory Cells
Self-Adaptive Output Buffer Based on Charge Sharing
Double Page Programming System and Method
Row Selector Occupying a Reduced Device Area for Semiconductor Memory Devices
Circuit and Method for Retrieving Data Stored in Semiconductor Memory Cells
Vertical Mosfet Transistor, in Particular Operating as a Selector in Nonvolatile Memory Devices
Dual Resistance Heater for Phase Change Devices and Manufacturing Method Thereof
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Related Assignments
(16)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 31, 2012
From: STMICROELECTRONICS S.R.L. (FORMERLY KNOWN AS SGS-THOMSON MICROELECTRONICS S.R.L.)
To: MICRON TECHNOLOGY, INC.
Reel/Frame 028888/0816 →
Assignment of Assignor's Interest
Nov 21, 2012
From: NUMONYX B.V.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 029406/0001 →
Assignment of Assignor's Interest
Jan 15, 2013
From: STMICROELECTRONICS S.R.L.
To: STMICROELECTRONICS NV
Reel/Frame 029631/0001 →
Assignment of Assignor's Interest
Jul 3, 2013
From: HYNIX SEMICONDUCTOR INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 030773/0561 →
Assignment of Assignor's Interest
Aug 26, 2013
From: BEZ, ROBERTO; PELLIZZER, FABIO; TOSI, MARINA; ZONCA, ROMINA
To: STMICROELECTRONICS S.R.L.; OVONYX INC.
Reel/Frame 031230/0543 →
Corrective Recordation Coversheet and Appendix to Remove Erroneously Listed Application Serial No. 11/495876 on Reel 029406 Frame 001
Dec 11, 2013
From: NUMONYX B.V.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 032069/0337 →
Assignment of Assignor's Interest
Dec 8, 2015
From: OVONYX, INC.
To: CARLOW INNOVATIONS LLC
Reel/Frame 037244/0954 →
Security Interest
May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Patent Security Agreement
Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
Change of Name
Jul 18, 2016
From: CARLOW INNOVATIONS, LLC
To: OVONYX MEMORY TECHNOLOGY, LLC
Reel/Frame 039379/0077 →
Assignment of Assignor's Interest
Sep 1, 2016
From: MICRON TECHNOLOGY, INC
To: OVONYX MEMORY TECHNOLOGY, LLC
Reel/Frame 039974/0496 →
Corrective Assignment to Correct the Replace Erroneously Filed Patent #7358718 with the Correct Patent #7358178 Previously Recorded on Reel 038669 Frame 0001. Assignor(S) Hereby Confirms the Security Interest.
Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
Security Interest
Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
Release of Security Interest
Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
Release of Security Interest
Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
Release of Security Interest
Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →