Dual resistance heater for phase change devices and manufacturing method thereof
View Patent ↗A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.
1. A method for manufacturing a phase change device, the method comprising:
forming a heater above a substrate;
increasing the resistance of an upper portion of said heater, but not of the entire heater, by implanting said upper portion with ions selected from the group consisting of silicon ions and oxygen ions; and, subsequently,
forming a phase change material layer above said heater, in contact with the upper portion of said heater.
2. The method of claim 1 , wherein said heater comprises titanium nitride and increasing the resistance comprises implanting said upper portion with silicon to form titanium silicon nitride.
3. The method of claim 1 , wherein increasing the resistance of said upper portion of said heater includes exposing said upper portion to a plasma.
4. The method of claim 3 , wherein the plasma is an oxygen plasma.
5. The method of claim 1 , further including forming said heater in a pore in a dielectric layer disposed above said substrate.
6. The method of claim 5 , wherein, before forming said heater, a spacer is formed within said pore.
7. The method of claim 5 , wherein forming said heater comprises depositing said heater in said pore.
8. The method of claim 7 , further including filling said pore with said heater.