Method of forming memory cell using gas cluster ion beams

1. A method of forming a memory cell, the method comprising:

forming a first electrode;

forming an insulating material on the first electrode;

forming a via in the insulating material to expose a surface of the first electrode;

forming a heater material within the via using gas cluster ion beams;

forming a variable resistance material within the via; and

forming a second electrode on the variable resistance material and heater material.

2. The method of claim 1 , wherein the heater material is formed on the surface of the first electrode and the variable resistance material is formed on the heater material.

3. The method of claim 2 , wherein a portion of the heater material on the insulating material is removed.

4. The method of claim 1 , wherein the variable resistance material is a phase-change material.

5. The method of claim 4 , wherein the phase-change material is one of Ge x Te y , GaSb, Sb x Te y , InSb, InSe, In x Sb y Te z , Sn x Sb y Te z , Ga x Se y Te z , InSbGe, AgInSbTe, GeSnSbTe, Te x Ge y Sb z S k , and GeSbSeTe.

6. The method of claim 5 , wherein the phase-change material has at least one of O, F, N, or C as impurity atoms.

7. The method of claim 1 , wherein the variable resistance material is one of NiO, TiO, CuS, and SrTiO.

8. The method of claim 1 , wherein the heater material has Ge as a primary atom and at least one of N, Sb, F, O, or Te as impurity atoms.

9. The method of claim 8 , wherein the impurity atoms are from about 0.5 to about 15 atomic percent of the heater material.

10. The method of claim 8 , wherein the impurity atoms are from about 5 to about 10 atomic percent of the heater material.

11. The method of claim 8 , wherein the heater material includes nitrogen impurity atoms that has a gradient nitrogen level through the material thickness.

12. The method of claim 8 , wherein nitrogen gas is used to control a concentration profile of nitrogen within the heater material.

13. The method of claim 1 , wherein GeH 4 , N 2 , and one or more of He, Ar, O 2 , F 2 , N 2 O, methoxide and ethoxide gases are used to form the heater material.

14. The method of claim 13 , wherein the heater material is formed from gases ionized at pressures in the range of from about 1500 to about 3000 PSI.

15. The method of claim 14 , wherein the gases are ionized under vacuum.

16. A method of forming a phase-change material memory cell, the method comprising:

forming a first electrode;

forming an insulating material on the first electrode;

forming a via in the insulating material to expose a surface of the first electrode;

forming a heater material comprising GeN within the via using gas cluster ion beams;

forming a phase-change material within the via; and

forming a second electrode on the phase change material and heater material.

17. The method of claim 16 , wherein the heater material is formed on the surface of the first electrode and the phase-change material is formed on the heater material.

18. The method of claim 16 , wherein GeH 4 , N 2 , and one or more of He, Ar, O 2 , F 2 , N 2 O, methoxide and ethoxide gases are used to form the heater material.

19. The method of claim 18 , further comprising scanning a gas over the via in a combination of passes which comprises a mix of GeH 4 , N 2 and one or more of He, Ar, O 2 , F 2 , N 2 O, methoxide or ethoxide gases.

20. The method of claim 16 , wherein the phase-change material is one of Ge x Te y , GaSb, Sb x Te y , InSb, InSe, In x Sb y Te z , Sn x Sb y Te z , Ga x Se y Te z , InSbGe, AgInSbTe, GeSnSbTe, Te x Ge y Sb z S k , and GeSbSeTe.

21. The method of claim 20 , wherein the phase-change material has at least one of O, F, N, or C as impurity atoms.