Integrated circuitry and switches
View Patent ↗Some embodiments include switches that have a graphene structure connected to a pair of spaced-apart electrodes. The switches may further include first and second electrically conductive structures on opposing sides of the graphene structure from one another. The first structure may extend from one of the electrodes, and the second structure may extend from the other of the electrodes. Some embodiments include the above-described switches utilized as select devices in memory devices. Some embodiments include methods of selecting memory cells.
1. A switch comprising:
a first electrode spaced from a second electrode;
first and second graphene structures conductively connected to both of the first and second electrodes;
a first electrically conductive projection extending from the first electrode and being on one side of the first graphene structure;
a second electrically conductive projection extending from the second electrode, being between the first and second graphene structures, and being on an opposing side of the first graphene structure from the first electrically conductive projection;
a third electrically conductive projection extending from the first electrode and being on an opposing side of the second graphene structure from the second electrically conductive projection;
a region of the first projection overlapping a region of the second projection; the first graphene structure being between the overlapping regions of the first and second projections; and
a region of the second projection overlapping a region of the third projection; the second graphene structure being between the overlapping regions of the second and third projections.
2. Integrated circuitry comprising:
a memory cell;
a switch electrically coupled to the memory cell, the switch comprising a graphene structure conductively connecting a first electrode to a second electrode in a first direction, wherein the switch further comprises a pair of electrically conductive structures configured to provide an electric field across the graphene structure in a second direction different from the first direction, with one of the electrically conductive structures being conductively coupled to one of the electrodes of said pair of electrodes, and with the other of the electrically conductive structures being conductively coupled to the other of the electrodes of said pair of electrodes; and
a silicon-containing base supporting the memory cell and switch.
3. The integrated circuitry of claim 2 , wherein the memory cell is a cross-point memory cell.
4. The integrated circuitry of claim 2 , wherein the memory cell is a PCRAM cell or an RRAM cell.
5. The integrated circuitry of claim 2 , wherein the graphene structure comprises two layers of graphene.
6. The integrated circuitry of claim 2 , wherein the second direction is substantially orthogonal to the first direction.