Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies
View Patent ↗The invention includes a construction comprising an MRAM device between a pair of conductive lines. Each of the conductive lines can generate a magnetic field encompassing at least a portion of the MRAM device. Each of the conductive lines is surrounded on three sides by magnetic material to concentrate the magnetic fields generated by the conductive lines at the MRAM device. The invention also includes a method of forming an assembly containing MRAM devices. A plurality of MRAM devices are formed over a substrate. An electrically conductive material is formed over the MRAM devices, and patterned into a plurality of lines. The lines are in a one-to-one correspondence with the MRAM devices and are spaced from one another. After the conductive material is patterned into lines, a magnetic material is formed to extend over the lines and within spaces between the lines.
1. A magnetoresistive memory array, comprising:
a plurality of memory cells, individual memory cells including a non-magnetic composition between a pair of magnetic compositions;
first electrically conductive contacts on first sides of the individual memory cells; the first electrically conductive contacts being configured to generate first magnetic fields overlapping at least portions of the individual memory cells when current is passed through the first electrically conductive contacts;
first magnetic material located outwardly of the first electrically conductive contacts and configured to concentrate the first magnetic fields;
second electrically conductive contacts located on opposite sides of the individual memory cells to the first sides; the second electrically conductive contacts being configured to generate second magnetic fields overlapping at least portions of the individual memory cells when current is passed through the second electrically conductive contacts; and
second magnetic material outwardly of the second electrically conductive contacts and configured to concentrate the second magnetic fields.
2. The array of claim 1 wherein the first electrically conductive contacts are one or more lines comprising rectangular cross-sectional shapes; wherein outer peripheries of the one or more lines extend along four sides of the rectangular cross-sectional shapes; and wherein the first magnetic material associated with a line extends entirely along three of the four sides.
3. The array of claim 1 wherein the first electrically conductive contacts are one or more lines comprising rectangular cross-sectional shapes; wherein outer peripheries of the one or more lines extend along four sides of the rectangular cross-sectional shapes; and wherein the first magnetic material associated with a line extends entirely along one of the four sides, and extends only partially along two other of the four sides.
4. The array of claim 1 wherein the second electrically conductive contact are one or more lines comprising rectangular cross-sectional shapes; wherein outer peripheries of the one or more lines extend along four sides of the rectangular cross-sectional shapes; and wherein the second magnetic material associated with a line extends entirely along three of the four sides.
5. The structure of claim 1 wherein the first and second magnetic materials both comprise one or more of Fe, Ni and Co.
6. The structure of claim 1 wherein the first and second magnetic materials are identical in composition relative to one another.
7. The structure of claim 1 wherein the first and second magnetic materials are different in composition relative to one another.