Devices and methods to program a memory cell

1. A method of programming a memory cell having at least two stable states, a first of the at least two stable states being a lower resistance state and a second of the at least two stable states being a higher resistance state having a resistance higher than the lower resistance state, the method comprising:

applying a voltage programming signal to the memory cell to transition the memory cell from the higher resistance state to the lower resistance state; and

applying a current programming signal to the memory cell to transition the memory cell from the lower resistance state to the higher resistance state, wherein the current programming signal comprises a decreasing current ramp after the memory cell enters a melting phase.

2. The method of claim 1 , wherein applying a voltage programming signal comprises maintaining the voltage programming signal at a voltage signal value until the memory cell enters the melting phase.

3. The method of claim 2 , further comprising applying to the memory cell a decreasing voltage programming signal after the memory cell enters the melting phase.

4. The method of claim 3 , wherein applying to the memory cell a decreasing voltage programming signal comprises applying a linearly decreasing voltage programming signal.

5. The method of claim 1 , wherein applying a current programming signal comprises maintaining the current programming signal at a current signal value until the memory cell enters the melting phase.

6. The method of claim 1 , wherein applying to the memory cell a decreasing current ramp comprises applying a linearly decreasing current programming signal.

7. The method of claim 1 , wherein the memory cell comprises phase change material.

8. A memory device, comprising:

a memory array, wherein at least one memory cell of the memory array has at least two stable states, a first of the at least two stable states being a lower resistance state and a second of the at least two stable states being a higher resistance state having a resistance higher than the lower resistance state; and

a memory controller configured to:

apply a voltage programming signal to the at least one memory cell to transition the at least one memory cell from the higher resistance state to the lower resistance state; and

apply a current programming signal to the at least one memory cell to transition the at least one memory cell from the lower resistance state to the higher resistance state, wherein the current programming signal comprises a decreasing current ramp after the at least one memory cell enters a melting phase.

9. The memory device of claim 8 , wherein the memory controller is further configured to maintain the voltage programming signal applied to the at least one memory cell at a voltage signal value until the at least one memory cell enters the melting phase.

10. The memory device of claim 9 , wherein the memory controller is further configured to apply to the at least one memory cell a decreasing voltage programming signal after the at least one memory cell enters the melting phase.

11. The memory device of claim 10 , wherein the memory controller is further configured to apply to the at least one memory cell the decreasing voltage programming signal at least until the at least one memory cell is transitioned to the lower resistance state.

12. The memory device of claim 8 , wherein the memory controller is further configured to maintain the current programming signal applied to the at least one memory cell at a current signal value until the at least one memory cell enters the melting phase.

13. The memory device of claim 8 , wherein the memory controller is further configured to apply to the at least one memory cell the decreasing current ramp at least until the at least one memory cell is transitioned to the higher resistance state.

14. A system, comprising:

a memory array, wherein at least one memory cell of the memory array has at least two stable states, a first of the at least two stable states being a lower resistance state and a second of the at least two stable states being a higher resistance state having a resistance higher than the lower resistance state;

a processor configured to process executable instructions to program information to the at least one memory cell; and

a memory controller configured to:

apply a voltage programming signal to the at least one memory cell to transition the at least one memory cell from the higher resistance state to the lower resistance state; and

apply a current programming signal to the at least one memory cell to transition the at least one memory cell from the lower resistance state to the higher resistance state, wherein the current programming signal comprises a decreasing current ramp after the at least one memory cell enters a melting phase.

15. The system of claim 14 , wherein the memory controller is further configured to apply to the at least one memory cell a decreasing voltage programming signal after the at least one memory cell enters the melting phase.

16. The system of claim 15 , further comprising a detector component configured to provide a signal indicating that the at least one memory cell is transitioned to the lower resistance state, wherein the memory controller is further configured to cease application of the decreasing voltage programming signal in response to the signal.

17. The system of claim 14 , further comprising a detector component configured to provide a signal indicating that the at least one memory cell is transitioned to the higher resistance state, wherein the memory controller is further configured to cease application of the decreasing current ramp in response to the signal.