Phase change memory cell with constriction structure
View Patent ↗Some embodiments include apparatus and methods having a memory cell with a first electrode and a second electrode, and a memory element directly contacting the first and second electrodes. The memory element may include a programmable portion having a material configured to change between multiple phases. The programmable portion may be isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element.
1. A device comprising:
a first electrode and a second electrode; and
a memory element including a material configured to change between different phases and to pass a current between the first and the second electrodes, the memory element including:
a first portion coupled to the first electrode and having a first cross-section area configured to allow the current to pass through;
a second portion coupled to the second electrode and having a second cross-section area configured to allow the current to pass through; and
a third portion coupled between the first and the second portions and having a third cross-section area configured to allow the current to pass through, wherein the third cross-section area is smaller than each of the first and the second cross-section areas, wherein the memory element includes an intermediate material between the first and the second portions, the intermediate material having a resistance value lower than a resistance value of each of the first portion, the second portion, and the third portion.
2. A device comprising:
a first electrode and a second electrode; and
a memory element including a material configured to change between different phases and to pass a current between the first and the second electrodes, the memory element including:
a first portion coupled to the first electrode and having a first cross-section area configured to allow the current to pass through;
a second portion coupled to the second electrode and having a second cross-section area configured to allow the current to pass through; and
a third portion coupled between the first and the second portions and having a third cross-section area configured to allow the current to pass through, wherein the third cross-section area is smaller than each of the first and the second cross-section areas, wherein the memory element includes an intermediate material between the first and the second portions, the intermediate material including one of TiN, ZrN, HfN, VN, NbN, TaN, TiC, ZrC, HfC, VC, NbC, TaC, TiB 2 , ZrB 2 , HfB 2 , VB 2 , NbB 2 , TaB 2 , Cr 3 C 2 , Mo 2 C, WC, CrB 2 , Mo 2 B5, W 2 B 5 , TiAlN, TiSiN, TiW, TaSiN, TiCN, SiC, B 4 C, WSix, MoSi 2 , NiCr, doped silicon, carbon, platinum, niobium, tungsten, or molybdenum.