Memory cells and methods of forming memory cells
View Patent ↗Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of from about 2 nanometers to about 30 nanometers, and can be more electrically resistive than the electrodes. Some embodiments include methods of forming memory cells that include heating elements directly between electrodes and programmable materials.
1. A method of forming and programming a memory cell, comprising:
forming a cap across a surface of a first electrode, the cap having a thickness in a range of from about 2 nanometers to about 30 nanometers; the cap being more electrically resistive than the electrode;
forming programmable material over the cap;
forming a second electrode over the programmable material;
utilizing the cap as a heating element during programming of the programmable material;
wherein the forming of the cap comprises oxidizing a surface of the first electrode; and
wherein the first electrode comprises titanium nitride and the cap comprises two separate layers; with one of the layers being TiO 2 and the other of the layers being TiO x N y , where x is in a range of from greater than 0 to about 2, and where y is in a range of from greater than or equal to 0 to about 1.
2. The method of claim 1 wherein the programmable material comprises a chalcogenide.
3. The method of claim 1 wherein the programmable material comprises Ge, Sb and Te.
4. A memory cell, comprising:
programmable material sandwiched between first and second electrodes;
the first electrode comprising titanium nitride; and
a cap across a surface of the first electrode; the cap having a thickness in a range of from about 2 nanometers to about 30 nanometers; the cap being more electrically resistive than the first electrode; the cap comprising two oxide layers with one of the oxide layers being directly against the programmable material and the other of the layers being directly against the first electrode; the oxide layer directly against the programmable material consisting of TiO 2 , and the oxide layer directly against the first electrode comprising TiO x N y , where x is in a range of from greater than 0 to about 2, and where y is in a range of from greater than or equal to 0 to about 1; and where a ratio of nitrogen to oxygen within the TiO x N y forms a gradient of decreasing nitrogen concentration with the highest nitrogen concentration being directly against the first electrode.
5. The memory cell of claim 4 wherein the programmable material comprises Ge 2 Sb 2 Te 5 .
6. The memory cell of claim 4 wherein the programmable material comprises phase change material.
7. The memory cell of claim 4 wherein the programmable material comprises a chalcogenide.