IP Library › Granted Patent US 8,674,333
Granted Patent B2
US 8,674,333 · App. 13/723,757 · Granted Mar 18, 2014

Variable-resistance material memories and methods

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Quick Facts
Patent No.
US 8,674,333
App. No.
13/723,757
Granted
Mar 18, 2014
Kind
B2
Abstract

Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.

Claims (35)

1. An apparatus comprising:

a first electrode disposed upon a semiconductive substrate;

a variable resistance material coupled to the first electrode, wherein a first minor-axis surface of the first electrode forms an interface with the variable resistance material; and

a second electrode coupled to the variable resistance material.

2. The apparatus of claim 1 , wherein the variable resistance material is selected from a group consisting of an alloy, a quasi-metal composition, a metal oxide, and a chalcogenide.

3. The apparatus of claim 1 , wherein a second minor-axis surface of the first electrode forms an interface with a contact pad.

4. The apparatus of claim 3 , wherein the contact pad is coupled to a buried digit line.

5. The apparatus of claim 1 , wherein the second electrode is common to a number of first electrodes.

6. An apparatus comprising:

a first electrode disposed upon a semiconductive substrate;

a variable resistance material coupled to the first electrode, wherein a first minor-axis surface of the variable resistance material forms an interface with the first electrode; and

a second electrode coupled to the variable resistance material.

7. The apparatus of claim 6 , wherein a second minor-axis surface of the variable resistance material forms an interface with the second electrode.

8. The apparatus of claim 7 , wherein a third minor-axis surface of the variable resistance material forms an interface with a contact pad.

9. The apparatus of claim 6 , wherein the second electrode is common to a number of first electrodes.

10. An apparatus comprising:

a first electrode disposed upon a semiconductive substrate;

a dielectric coupled to the first electrode, the dielectric having a height that is coextensive with a major-axis dimension of the first electrode;

a variable resistance material coupled to the first electrode, wherein a first minor-axis surface of the first electrode forms an interface with the variable resistance material; and

a second electrode coupled to the variable resistance material.

11. The apparatus of claim 10 , wherein a second minor-axis surface of the first electrode forms an interface with a contact pad.

12. The apparatus of claim 10 , wherein the second electrode is common to a number of first electrodes.

13. The apparatus of claim 10 , wherein the variable resistance material includes a doped chalcogenide glass.

14. The apparatus of claim 10 , wherein the variable resistance material includes a collosal magnetoresistive material.

15. An apparatus comprising:

a first electrode disposed upon a semiconductive substrate;

a variable resistance material coupled to the first electrode, wherein a first minor-axis surface of the variable resistance material forms an interface with the first electrode;

a dielectric coupled to the variable resistance material, the dielectric having a height that is coextensive with a major-axis dimension of the variable resistance material;

a second electrode coupled to the variable resistance material.

16. The apparatus of claim 15 , wherein the variable resistance material includes a gallium based phase change material.

17. The apparatus of claim 15 , wherein the variable resistance material includes a germanium based phase change material.

18. The apparatus of claim 15 , wherein the variable resistance material includes an indium based phase change material.

19. The apparatus of claim 15 , wherein the variable resistance material includes an antimony based phase change material.

20. The apparatus of claim 15 , wherein the variable resistance material includes an telluirium based phase change material.

21. The apparatus of claim 15 , wherein the variable resistance material includes an selenium based phase change material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 1, 2016
From: MICRON TECHNOLOGY, INC
To: OVONYX MEMORY TECHNOLOGY, LLC
Reel/Frame 039974/0496 →