Spin current generator for STT-MRAM or other spintronics applications
View Patent ↗Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
1. A device, comprising:
an array of memory cells;
a spin current generator configured to generate a unidirectional spin programming current through at least one of the memory cells.
2. The device, as set forth in claim 1 , wherein each of the memory cells in the array of memory cells comprises a spin torque transfer magnetic random access memory cell having a free layer and a pinned layer.
3. The device, as set forth in claim 2 , wherein the pinned and free layers comprise ferromagnetic materials.
4. The device, as set forth in claim 2 , comprising an antiferromagnetic material deposited below the pinned layer.
5. The device, as set forth in claim 2 , comprising a nonmagnetic layer deposited between the free layer and the pinned layer.
6. The device, as set forth in claim 1 , wherein the spin current generator comprises a piezoelectric material.
7. The device, as set forth in claim 1 , wherein the spin current generator comprises a heater material.
8. The device, as set forth in claim 1 , wherein the spin current generator is configured to generate a unidirectional single-spin polarized programming current to at least one of the memory cells and a unidirectional non-spin polarized programming current to at least one of the memory cells.
9. The device, as set forth in claim 1 , wherein the spin current generator is configured to generate the unidirectional spin programming current in a first direction and a second direction, wherein the first and second directions are opposite one another.
10. A device, comprising:
a structure configured to generate a unidirectional spin programming current to each of an array of memory cells and generate a unidirectional non-spin polarized programming current to each of the array of memory cells; and
a gate configured to selectively apply a voltage to the structure.
11. The device, as set forth in claim 10 , wherein the structure comprises a ferromagnetic layer and a nonmagnetic layer.
12. The device, as set forth in claim 11 , comprising a heater material formed adjacent to the ferromagnetic layer and the nonmagnetic layer.
13. The device, as set forth in claim 11 , comprising a piezoelectric material formed adjacent to the ferromagnetic layer and the nonmagnetic layer.
14. The device, as set forth in claim 11 , comprising an insulative material formed adjacent to the ferromagnetic layer and the nonmagnetic layer.
15. The device, as set forth in claim 10 , wherein the gate comprises a transistor.
16. The device, as set forth in claim 10 , comprising the array of memory cells, wherein the each of the memory cells in the array comprises a spin torque transfer magnetic random access memory cell having a free layer and a pinned layer.
17. The device, as set forth in claim 10 , comprising the array of memory cells, wherein the memory cells are coupled in series to one another.
18. A device comprising:
a structure comprising a spin-polarizing layer and a material that decreases or eliminates a spin polarization of the spin-polarizing layer, wherein the structure is configured to generate a unidirectional spin programming current to an array of memory cells, and the structure is configured to generate a unidirectional non-spin polarized programming current to the array of memory cells.
19. The device, as set forth in claim 18 , wherein the material comprises a heater material configured to apply heat to decrease or eliminate the spin polarization of the spin-polarizing layer.
20. The device, as set forth in claim 18 , wherein the material is formed adjacent to the spin-polarizing layer.
21. The device, as set forth in claim 18 , wherein the structure comprises a non-magnetic layer disposed directly on a first surface of the spin-polarizing layer.
22. The device, as set forth in claim 18 , wherein the structure comprises an anti-ferromagnetic layer disposed directly on a second surface of the spin-polarizing layer.
23. The device, as set forth in claim 18 , wherein the spin-polarizing layer comprises a ferromagnetic material.
24. The device, as set forth in claim 18 , comprising a gate configured to selectively apply a voltage to the spin-polarizing layer.