Methods of forming metal-containing structures, and methods of forming germanium-containing structures
View Patent ↗Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.
1. A method of forming a metal-containing structure, comprising:
flowing hydrogen-containing reactant across a surface of a first metal-containing material to form a hydrogen-containing layer along the surface; the hydrogen-containing reactant comprising one or both of formic acid and formaldehyde;
reacting hydrogen from the hydrogen-containing layer with a metal-containing precursor to form a second metal-containing material directly against the surface of the first metal-containing material; and
wherein the second metal-containing material is purer than the first metal-containing material relative to one or more of oxygen, nitrogen and carbon contamination.
2. The method of claim 1 wherein the reacting with the metal-containing precursor is conducted in a same reaction chamber as the forming of the hydrogen-containing layer; and wherein the metal-containing precursor and hydrogen-containing reactant are within the reaction chamber at different and substantially non-overlapping times relative to one another.
3. The method of claim 1 wherein the hydrogen-containing reactant comprises formic acid.
4. The method of claim 1 wherein the hydrogen-containing reactant comprises formaldehyde.
5. The method of claim 1 wherein the surface of the first metal-containing material comprises germanium, and wherein the second metal-containing material also comprises germanium.
6. The method of claim 1 wherein the surface of the first metal-containing material comprises antimony or tellurium, and wherein the second metal-containing material comprises germanium.
7. A method of forming a germanium-containing structure, comprising:
flowing hydrogen-containing reactant into a reaction chamber to form a hydrogen-containing layer across a germanium-containing surface of a first germanium-containing material;
removing any unreacted hydrogen-containing reactant from within the reaction chamber;
after removing unreacted hydrogen-containing reactant from within the reaction chamber, flowing germanium-containing precursor into the reaction chamber, the germanium-containing precursor reacting with hydrogen from the hydrogen-containing layer to form a second germanium-containing material directly against the first germanium-containing material; and
wherein the first germanium-containing material is less pure in germanium than the second germanium-containing material.
8. A method of forming a germanium-containing structure, comprising:
forming a first germanium-containing material from germanium amidinate and reductant; the reductant comprising one or both of H 2 and NH 3 ;
flowing hydrogen-containing reactant into a reaction chamber to form a hydrogen-containing layer across a germanium-containing surface of the germanium-containing material;
removing any unreacted hydrogen-containing reactant from within the reaction chamber;
after removing unreacted hydrogen-containing reactant from within the reaction chamber, flowing germanium-containing precursor into the reaction chamber, the germanium-containing precursor reacting with hydrogen from the hydrogen-containing layer to form a second germanium-containing material directly against the first germanium-containing material; and
wherein the first germanium-containing material is less pure in germanium than the second germanium-containing material.
9. The method of claim 8 wherein the reductant comprises H 2 .
10. The method of claim 8 wherein the reductant comprises NH 3 .