Phase change memory cell and method of formation

1. A memory element comprising:

first and second electrodes;

an insulating material between the first and second electrodes;

chalcogenide-comprised phase change material between the first and second electrodes; and

tin-telluride material between the phase change material and the second electrode, wherein the phase change material and tin-telluride material are formed in a via within the insulating material that extends at least partially through the first electrode.

2. The memory element of claim 1 , wherein the phase change material has a thickness of less than or equal to about 100 Å at an edge of the via adjacent the first electrode.

3. The memory element of claim 1 , wherein the memory element configured to be set to a first resistance state using a current of less than or about 200 μA.

4. The memory element of claim 1 , wherein the memory element is configured to be reset to a second resistance state using a current of less than or about 280 μA.

5. The memory element of claim 3 , wherein the memory element is configured to be reset to the first resistance state using a voltage of about 1.17 V.

6. The memory element of claim 4 , wherein the memory element is configured to be set to the second resistance state using a voltage of about 1.4 V.

7. The memory element of claim 1 , wherein the phase change material comprises germanium-telluride.

8. The memory element of claim 7 , wherein the phase change material comprises less than 70% telluride.

9. The memory element of claim 1 , wherein the tin telluride material comprises about 50% tin and 50% telluride.

10. The memory element of claim 1 , wherein one or both of the first and second electrodes comprise tungsten.

11. A memory array comprising:

a plurality of memory elements, at least one memory element comprising:

first and second electrodes;

an insulating layer between the first and second electrodes;

chalcogenide-comprised phase change material between the first and second electrodes; and

tin-telluride material between the phase change material and the second electrode wherein the phase change material and tin-telluride material are formed in a via within the insulating layer that extends at least partially through the first electrode.

12. The memory array of claim 11 , wherein the phase change material has a thickness of less than or equal to about 100 Å at an edge of the via adjacent the first electrode.

13. The memory array of claim 11 , wherein the phase change material comprises germanium-telluride.

14. A method for forming a memory element, the method comprising:

forming a first electrode;

forming an insulating layer over the first electrode;

forming a via within the insulating layer extending at least partially through the first electrode;

forming chalcogenide-comprised phase change material over the first electrode and within the via;

forming tin-telluride material over the phase change material and within the via; and

forming a second electrode over the tin-telluride material.

15. The method of claim 14 , wherein at least a portion of the phase change material is formed having a thickness of about 300 Å.

16. The method of claim 14 , wherein the phase change material is formed comprising germanium-telluride.

17. The method of claim 14 , wherein the metal-chalcogenide material is formed having a thickness of about 500 Å.

18. The method of claim 14 , wherein one or both of the first and second electrodes are formed comprising tungsten.