Resistive memory and methods of processing resistive memory
View Patent ↗Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.
1. A method of processing a resistive memory cell, comprising:
forming a seam in a cell material by conformally forming the cell material; and
forming a conductive pathway in the seam.
2. The method of claim 1 , wherein the method includes forming the conductive pathway in the seam by modifying the seam.
3. The method of claim 1 , wherein the method includes forming an electrode on the cell material and the seam.
4. The method of claim 1 , wherein forming the conductive pathway in the seam includes forming a filament in the seam.
5. The method of claim 4 , wherein the method includes heating the filament after forming the filament in the seam.
6. A method of processing a resistive memory cell, comprising:
conformally forming a cell material in an opening;
wherein a seam is formed in the cell material.
7. The method of claim 6 , wherein the method includes conformally forming the cell material in an opening in an interlayer dielectric.
8. The method of claim 6 , wherein the method includes forming a conductive pathway in the seam.
9. The method of claim 6 , wherein cell material is formed between a bottom of the seam and an additional electrode adjacent the opening.
10. The method of claim 9 , wherein no additional material is formed between the bottom of the seam and the additional electrode.
11. A method of processing a resistive memory cell, comprising:
conformally forming a resistive memory cell material such that a seam is formed in the resistive memory cell material;
forming a conductive pathway in the seam; and
removing a portion of the resistive memory cell material.
12. The method of claim 11 , wherein the method includes removing a portion of the conductive pathway.
13. The method of claim 11 , wherein the seam is an opening in the resistive memory cell material.
14. A resistive memory cell, comprising:
an interlayer dielectric having an opening;
a cell material in the opening;
a seam in the cell material; and
a conductive pathway in the seam.
15. The resistive memory cell of claim 14 , wherein the opening has a diameter of 10 to 30 nanometers.
16. The resistive memory cell of claim 14 , wherein:
the resistive memory cell includes an electrode adjacent the opening; and
the seam is not in contact with the electrode.
17. The resistive memory cell of claim 14 , wherein the resistive memory cell includes an electrode on the cell material and the conductive pathway.
18. The resistive memory cell of claim 14 , wherein the conductive pathway has a diameter of 0.5 nanometers to 5.0 nanometers.
19. A resistive memory cell, comprising:
a resistive memory cell material conformally formed such that the resistive memory cell material includes a seam; and
a conductive pathway in the seam, wherein the conductive pathway includes a filament that is a different material than the resistive memory cell material.
20. The resistive memory cell of claim 19 , wherein the conductive pathway includes a metal material.
21. The resistive memory cell of claim 19 , wherein the conductive pathway includes a metal oxide material.
22. The resistive memory cell of claim 19 , wherein the resistive memory cell material is a resistive random access memory cell material.