Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal

1. A method for annealing a doped layer on a substrate, comprising:

depositing a polycrystailine layer on a substrate;

implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer containing a dopant concentration within a range from about 1×10 19 atoms/cm 3 to about 1×10 21 atoms/cm 3 ;

exposing the doped polycrystalline layer to a rapid thermal anneal; and

heating the doped polycrystalline layer to a temperature of about 1,050° C. or greater during a laser anneal.

2. The method of claim 1 , wherein the substrate is heated during the rapid thermal anneal to about 1,000° C. for a time period within a range from about 1 second to about 10 seconds.

3. The method of claim 1 , wherein the temperature is within a range from about 1,050° C. to about 1,400° C. during the laser anneal.

4. The method of claim 3 , wherein the laser anneal last for about 500 milliseconds or less.

5. The method of claim 4 , wherein the doped polycrystalline layer has an electrical resistivity of less than about 400 ohms/cm 2 .

6. A method for annealing a layer on a substrate, comprising:

depositing a polycrystalline layer on a substrate;

doping the polycrystalline layer with a dopant to form a doped polycrystalline layer;

annealing the doped polycrystalline layer during a rapid thermal anneal; and

heating the doped polycrystalline layer to a temperature of about 1,050° C. or greater during a laser anneal for about 500 milliseconds or less.

7. The method of claim 6 , wherein the dopant is selected from the group consisting of boron, phosphorous, arsenic and combinations thereof and the doped polycrystalline layer has a dopant concentration within a range from about 1×10 19 atoms/cm 3 to about 1×10 21 atoms/cm 3 .

8. The method of claim 7 , wherein the substrate is heated during the rapid thermal anneal to about 1,000° C. for a time period within a range from about 2 seconds to about 20 seconds.

9. The method of claim 6 , wherein the temperature is within a range from about 1,050° C. to about 1,400° C. during the laser anneal.

10. The method of claim 9 , wherein the laser anneal last for about 100 milliseconds or less.

11. The method of claim 10 , wherein the doped polycrystalline layer has an electrical resistivity of less than about 400 ohms/cm 2 .

12. A method for annealing a doped silicon layer on a substrate, comprising:

depositing a polycrystalline layer on a substrate;

doping the polycrystalline layer with boron to form a doped polycrystalline layer;

exposing the doped polycrystalline layer to a rapid thermal anneal at a first temperature; and

exposing the doped polycrystalline layer to a laser anneal at a second temperature of about 1,050° C. or higher for about 500 milliseconds or less.

13. The method of claim 12 , wherein the doped polycrystalline layer has a boron concentration within a range from about 1×10 19 atoms/cm 3 to about 1×10 21 atoms/cm 3 .

14. The method of claim 13 , wherein the first temperature is about 1,000° C. and the substrate is heated for a time period within a range from about 2 seconds to about 20 seconds.

15. The method of claim 13 , wherein the laser anneal last for about 100 milliseconds or less.

16. The method of claim 15 , wherein the doped polycrystalline layer has an electrical resistivity of less than about 400 ohms/cm 2 .

17. A method for annealing a layer on a substrate, comprising:

depositing a doped polycrystalline layer on a substrate, wherein the doped polycrystalline layer has a dopant concentration within a range from about 1×10 19 atoms/cm 3 to about 1×10 21 atoms/cm 3 ;

exposing the doped polycrystalline layer to a rapid thermal anneal; and

heating the doped polycrystalline layer to a temperature of about 1,050° C. or greater during a laser anneal to provide an electrical resistivity of about 400 ohms/cm 2 or less for the doped polycrystalline layer.

18. The method of claim 17 , wherein the doped polycrystalline layer comprises a boron concentration within a range from about 1×10 20 atoms/cm 3 to about 5×10 20 atom/cm 3 .

19. The method of claim 18 , wherein the substrate is heated during the rapid thermal anneal to about 1,000° C. for a time period within a range from about 2 seconds to about 20 seconds.

20. The method of claim 18 , wherein the temperature is within a range from about 1,050° C. to about 1,400° C. during the laser anneal.

21. The method of claim 20 , wherein the laser anneal last for about 100 milliseconds or less.

22. The method of claim 1 , wherein the temperature is about 1,350° C. during the laser anneal.

23. The method of claim 1 , wherein the temperature is less than about 1,415° C. during the laser anneal.

24. The method of claim 6 , wherein the temperature is about 1,350° C. during the laser anneal.

25. The method of claim 6 , wherein the temperature is less than about 1,415° C. during the laser anneal.

26. The method of claim 12 , wherein the temperature is about 1,350°0 C. during the laser anneal.

27. The method of claim 12 , wherein the temperature is less than about 1,415° C. during the laser anneal.

28. The method of claim 17 , wherein the temperature is about 1,350°0 C. during the laser anneal.

29. The method of claim 17 , wherein the temperature is less than about 1,415° C. during the laser anneal.

30. The method of claim 4 , wherein the doped polycrystalline layer contains a boron concentration within a range from about 1×10 20 atoms/cm 3 to about 5×10 20 atoms/cm 3 .

31. The method of claim 10 , wherein the doped polycrystalline layer contains a boron concentration within a range from about 1×10 20 atoms/cm 3 to about 5×10 20 atoms/cm 3 .

32. The method of claim 13 , wherein the boron concentration is within a range from about 1×10 20 atoms/cm 3 to about 5×10 20 atoms/cm 3 .

33. The method of claim 17 , wherein the temperature is within a range from about 1,050° C. to about 1,400° C. for about 100 milliseconds or less during the laser anneal.