IP Library Granted Patent US 7,052,934
Granted Patent B2
US 7,052,934 · App. 10/787,740 · Granted May 30, 2006

Fabrication method of semiconductor device

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Quick Facts
Patent No.
US 7,052,934
App. No.
10/787,740
Granted
May 30, 2006
Kind
B2
Abstract

A fabrication method of a semiconductor device according to the present invention includes the steps of: bonding a reinforcing plate with a front surface of a semiconductor wafer via a reinforcing plate, the reinforcing plate having holes and the semiconductor wafer bearing semiconductor devices; grinding a back surface of the semiconductor wafer; and detaching the reinforcing plate from the semiconductor wafer by injecting a solvent for dissolving an adhesive layer into the holes and by allowing the solvent to permeate through the adhesive layer. The method enables the reinforcing plate to be quickly detached from the semiconductor wafer without causing defects, such as bending and cracking, in the semiconductor wafer after the reinforcing plate is used to grind the semiconductor wafer.

Claims (28)

1. A method for fabricating a semiconductor device, the method comprising:

a reinforcing step of bonding a reinforcing plate, via an adhesive layer, on a front surface of a semiconductor wafer bearing one or more semiconductor devices, the reinforcing plate having one or more holes that connect a front surface and a back surface of the reinforcing plate;

a grinding step of grinding a back surface of the semiconductor wafer;

a bonding step of bonding a dicing tape on the back surface of the semiconductor wafer after said grinding;

a detaching step of detaching the reinforcing plate from the semiconductor wafer by injecting through said one or more holes a solvent for dissolving the adhesive layer;

a dicing step of dicing the semiconductor wafer so as to separate the semiconductor devices into individual pieces,

said bonding step being carried out after said grinding step and before said detaching step,

said dicing step being carried out after said detaching step; and

wherein, in said detaching step, a side surface of the adhesive layer is covered with a jig before the solvent is injected into said one or more holes.

2. The method as set forth in claim 1 , the holes are scattered over the reinforcing plate.

3. The method as set forth in claim 1 ,

wherein the holes are formed at regular intervals through the reinforcing plate, and

wherein, in the detaching step, the solvent is injected to the adhesive layer through the holes that are formed at regular intervals.

4. A method for fabricating a semiconductor device, comprising:

a reinforcing step of bonding a reinforcing plate, via an adhesive layer, with a semiconductor wafer bearing a semiconductor device on its front surface, the reinforcing plate having a surface with one or more grooves that extend to a side surface of the reinforcing plate, wherein the reinforcing plate is bonded with the semiconductor wafer so that the surface with the grooves is in contact with the front surface of the semiconductor wafer;

a grinding step of grinding a back surface of the semiconductor wafer; and

a detaching step of detaching the reinforcing plate from the front surface of the semiconductor wafer by injecting to at least one opening of said one or more grooves a solvent for dissolving the adhesive layer, the at least one opening being formed on the side surface of the reinforcing plate.

5. The method as set forth in claim 4 , wherein the grooves are scattered over the reinforcing plate.

6. The method as set forth in claim 4 ,

wherein the grooves are formed in the form of a lattice, and

wherein, in the detaching step, the solvent is injected to the adhesive layer through the grooves formed in the form of a lattice.

7. The method as set forth in claim 4 , further comprising:

a bonding step of bonding a dicing tape on the back surface of the semiconductor wafer after grinding; and

a dicing step of dicing the semiconductor wafer so as to separate the semiconductor devices into individual pieces,

said bonding step being carried out after said grinding step and before said detaching step, and

said dicing step being carried out after said detaching step.

8. The method as set forth in claim 7 , wherein, in said detaching step, a side surface of the adhesive layer is covered with a jig that includes an injection opening through which the solvent is injected to said one or more grooves.

9. The method of claim 4 , wherein the reinforcing plate does not have any through-holes defined therein which extend from the front to back of the reinforcing plate, and the grooves are in a criss-crossing arrangement and an open side of each groove is exposed to the adhesive layer prior to the detaching step.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 14, 2013
From: SHARP KABUSHIKI KAISHA
To: INVENSAS CORPORATION
Reel/Frame 031401/0219 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2004
From: KURIMOTO, HIDEYUKI; DOTTA, YOSHIHISA; KIMURA, TOSHIO
To: SHARP KABUSHIKI KAISHA
Reel/Frame 015031/0351 →