IP Library Granted Patent US 7,026,697
Granted Patent B2
US 7,026,697 · App. 10/790,339 · Granted Apr 11, 2006

Microstructures comprising a dielectric layer and a thin conductive layer

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Quick Facts
Patent No.
US 7,026,697
App. No.
10/790,339
Granted
Apr 11, 2006
Kind
B2
Abstract

Surface micromachined structures having a relatively thick dielectric layer and a relatively thin conductive layer bonded together.

Claims (50)

1. A micromachined apparatus comprising:

a substrate; and

a released microstructure disposed on the substrate, comprising:

a dielectric layer, and

a conductive polysilicon layer attached to the dielectric layer, wherein the polysilicon layer has a thickness less than ⅕ the dielectric layer thickness.

2. The apparatus of claim 1 wherein the polysilicon layer contacts and covers the dielectric layer.

3. The apparatus of claim 1 wherein the polysilicon layer is enclosed within the dielectric layer.

4. The apparatus of claim 1 comprising an additional polysilicon layer attached to the dielectric layer, and wherein the dielectric layer is sandwiched between the polysilicon layers.

5. The apparatus of claim 4 wherein the polysilicon layers have equal thickness.

6. The apparatus of claim 1 wherein the dielectric layer comprises a via hole.

7. The apparatus of claim 1 wherein the microstructure comprises a cantilever that is attached to the substrate.

8. The apparatus of claim 1 wherein the microstructure comprises a switch.

9. The apparatus of claim 1 comprising a conductive pad disposed on the substrate and electrostatically coupled to the polysilicon layer, and wherein the microstructure is capable of being deflected by an electrostatic force applied to the polysilicon layer.

10. The apparatus of claim 1 wherein the dielectric layer comprises silicon carbide.

11. A micromachined apparatus comprising:

a substrate; and

a released microstructure disposed on the substrate, comprising:

a dielectric layer, and

a conductive layer attached to the dielectric layer, wherein the conductive layer has a thickness less than ⅕ the dielectric layer thickness, and wherein the conductive layer is disposed between the substrate and the dielectric layer,

wherein the released microstructure is electrically deflectable with respect to the substrate.

12. The apparatus of claim 11 wherein the conductive layer contacts and covers the dielectric layer.

13. A micromachined apparatus comprising:

a substrate; and

a released microstructure disposed on the substrate, comprising:

a dielectric layer, and

a conductive layer attached to the dielectric layer, wherein the conductive layer has a thickness less than ⅕ the dielectric layer thickness, and wherein the conductive layer is enclosed within the dielectric layer,

wherein the released microstructure is electrically deflectable with respect to the substrate.

14. A micromachined apparatus comprising:

a substrate; and

a released microstructure disposed on the substrate, comprising:

a dielectric layer,

a first conductive layer attached to the dielectric layer, wherein the conductive layer has a thickness less than ⅕ the dielectric layer thickness, and

a second conductive layer attached to the dielectric layer, and wherein the dielectric layer is sandwiched between the conductive layers,

wherein the released microstructure is electrically deflectable with respect to the substrate.

15. The apparatus of claim 14 wherein the first and second conductive layers have equal thickness.

16. A micromachined apparatus comprising:

a substrate; and

a released microstructure disposed on the substrate, comprising:

a dielectric layer comprising a via hole, and

a conductive layer attached to the dielectric layer, wherein the conductive layer has a thickness less than ⅕ the dielectric layer thickness,

wherein the released microstructure is electrically deflectable with respect to the substrate.

17. The apparatus of claim 11 wherein the microstructure comprises a cantilever that is attached to the substrate.

18. The apparatus of claim 11 wherein the microstructure comprises a switch.

19. The apparatus of claim 11 wherein the dielectric layer comprises silicon carbide.

20. A micromachined apparatus comprising:

a substrate; and

a released microstructure disposed on the substrate, comprising:

a silicon carbide dielectric layer, and

a conductive layer attached to the dielectric layer, wherein the conductive layer has a thickness less than ⅕ the dielectric layer thickness, and wherein the conductive layer is disposed between the substrate and the dielectric layer,

wherein the released microstructure is electrically deflectable with respect to the substrate.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE INSIDE THE ASSIGNMENT DOCUMENTATION PREVIOUSLY RECORDED AT REEL: 048698 FRAME: 0301. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Apr 10, 2019
From: NUVOTRONICS, INC.
To: CUBIC CORPORATION
Reel/Frame 048843/0801 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2019
From: NUVOTRONICS, INC.
To: CUBIC CORPORATION
Reel/Frame 048698/0301 →
CHANGE OF NAME Recorded Dec 14, 2018
From: NUVOTRONICS, LLC
To: NUVOTRONICS, INC
Reel/Frame 047915/0841 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2011
From: ROHM AND HAAS ELECTRONIC MATERIALS LLC; ROHM AND HAAS COMPANY
To: NUVOTRONICS, LLC
Reel/Frame 027337/0656 →