Method for forming a tunable piezoelectric microresonator

1. A process for manufacturing a resonator comprising the successive steps of:

forming on an insulating substrate a first portion of a conductive material and a second portion of another material on the first portion, the second portion being formed of a material selectively etchable with respect to the materials of other elements formed during the process;

forming an insulating layer having its upper surface flush with an upper part of the second portion;

forming by a succession of depositions and etchings a beam of a conductive material above the second portion, beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above a beam portion located above the second portion; and

removing the second portion.

2. The process of claim 1 , comprising, during the step of forming the first portion of conductive material, forming of a fifth portion of the same conductive material as the first portion on the insulating substrate and continuing the first portion, the insulating layer formed at the next step covering the fifth portion.

3. The process of claim 1 , wherein forming the first portion and the second portion comprises the steps of:

depositing a layer of a conductive material on a substrate;

depositing on the conductive material layer a layer of a material selectively etchable with respect to the materials of the other elements formed during the process; and

etching the two layers to form the second portion superposed to the first portion.

4. The process of claim 1 , wherein forming the first portion and the second portion comprises the steps of:

depositing a first layer of a conductive material on a substrate;

etching the first conductive material layer to form the first portion;

depositing on the first portion and on the substrate a second layer of a material selectively etchable with respect to the materials of the other elements formed during the process; and

etching the second layer to form the second portion on the first portion.

5. The process of claim 1 , wherein the step of forming the beam, the third portion, and the fourth portion comprises the steps of:

covering the insulating layer and the second portion with a first layer of a conductive material;

etching the first layer to form said beam transversely above the second portion;

depositing a layer of a piezoelectric material above a structure assembly comprising said beam, the second portion and the insulating layer;

depositing a second layer of a conductive material above the piezoelectric material layer; and

etching the piezoelectric material layer and the second layer to form the fourth portion of a conductive material superposed to the third portion of a piezoelectric material.

6. The process of claim 1 , wherein the step of forming the beam, the third portion, and the fourth portion comprises the steps of:

covering the insulating layer and the second portion with a first layer of a conductive material;

depositing a layer of a piezoelectric material above the first layer;

depositing a second layer of a conductive material above the piezoelectric material layer;

etching the second layer to form the fourth portion of a conductive material; and

etching the piezoelectric material layer and the first layer to form the third piezoelectric material portion superposed to the beam of a conductive material.

7. The process of claim 1 , wherein said insulating substrate corresponds to the insulating layer of an integrated circuit between penultimate and last interconnect levels, said first portion corresponding to a portion of the last interconnect level.

8. The process of claim 1 , comprising, during the step of forming the beam, the third portion and the fourth portion, forming an additional beam of a resistant material under said beam.

9. A process for manufacturing resonator, comprising, in the order listed:

depositing a first layer of a conductive material on an insulating substrate to form a first portion;

depositing on the first layer a second layer of a material that is selectively etchable with respect to materials of other elements formed during the process;

etching the first and second layers to form a second portion superimposed to the first portion;

forming an insulating layer having its upper surface flush with an upper part of the second portion;

forming by a succession of depositions and etchings of a beam of a conductive material above the second portion, beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above a beam portion located above the second portion; and

removing the second portion.

10. The process of claim 9 , comprising, during the step of forming the first portion of conductive material, forming a fifth portion of the same conductive material as the first portion on the insulating substrate and continuing the first portion, the insulating layer covering the fifth portion.

11. A process for manufacturing a resonator, comprising, in the order listed:

depositing a first layer of a conductive material on an insulating substrate;

etching the first layer to form the first portion;

depositing on the first portion and on the substrate a second layer of material that is selectively etchable with respect to materials of other elements formed during the process;

etching the second layer to form a second portion on the first portion;

forming an insulating layer having its upper surface flush with an upper part of the second portion;

forming by a succession of depositions and etchings a beam of a conductive material above the second portion, beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above a beam portion located above the second portion; and

removing the second portion.

12. The process of claim 11 , comprising, during the step of forming the first portion of conductive material, forming a fifth portion of the same conductive material as the first portion on the insulating substrate and continuing the first portion, the insulating layer covering the fifth portion.