IP Library Granted Patent US 7,208,838
Granted Patent B2
US 7,208,838 · App. 10/799,743 · Granted Apr 24, 2007

Semiconductor device, circuit board, and electronic instrument suitable for stacking and having a through hole

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Quick Facts
Patent No.
US 7,208,838
App. No.
10/799,743
Granted
Apr 24, 2007
Kind
B2
Abstract

A semiconductor device includes a semiconductor device body section having a substrate and an electrode formed on the substrate. A through-hole is formed through the electrode and the substrate in a stacking direction of the electrode and the substrate, and a conductive member is inserted into the through-hole. An insulating material which faces at least the through-hole is formed on the electrode. The conductive member is formed over the insulating material from the through-hole and is connected with the electrode.

Claims (16)

1. A semiconductor device comprising:

a substrate having a first through-hole formed therein;

an electrode being formed on the substrate, the electrode having a second through-hole formed therein that overlaps with the first through-hole, the second through-hole being larger than the first through-hole;

an interlayer dielectric being formed between the substrate and the electrode, the interlayer dielectric having a third through-hole formed therein that overlaps with the first and second through-holes, the third through-hole being larger than the first through-hole;

a conductive member being inserted into the first, second and third through-holes, the conductive member having a first portion positioned in the first through-hole and a second portion positioned in the second and third through-holes, the second portion positioned in the second and third through-holes, the second portion having a larger diameter than the first portion; and

an insulating material being disposed around the conductive member in the first, second and third through-holes the insulating material including a wall portion located higher than at least the electrode,

the conductive member being formed over the wall portion of the insulating material from the first, second and third through-hole and being connected with the electrode.

2. The semiconductor device as defined in claim 1 ,

wherein the insulating material is formed to cover an upper surface of the electrode, and includes a connection hole for connecting at least the electrode with the conductive member at a position differing from the first, second and third through-holes, the wall portion being disposed between the connection hole and the first, second and third through holes.

3. The semiconductor device as defined in claim 1 ,

wherein the conductive member functions as a connection terminal which secures electrical connection in an axial direction of the through-hole.

4. The semiconductor device as defined in claim 1 ,

wherein a part of the conductive member projects outward from the first, second and third through-holes on a side of the substrate opposite to a side on which the electrode is formed.

5. A semiconductor device comprising a plurality of the semiconductor devices as defined in claim 1 which is stacked, each of the semiconductor devices being electrically connected through the conductive member.

6. A circuit board comprising the semiconductor device as defined in claim 1 .

7. An electronic instrument comprising the circuit board as defined in claim 6 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2017
From: SEIKO EPSON CORPORATION
To: ADVANCED INTERCONNECT SYSTEMS LIMITED
Reel/Frame 044938/0869 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2004
From: MASUDA, KAZUHIRO
To: SEIKO EPSON CORPORATION
Reel/Frame 014921/0318 →