Semiconductor device

1. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula A x B x C x O x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and each of A, B, and C are different from each other and from O; and

a gate dielectric positioned between a gate electrode and the channel.

2. The semiconductor device of claim 1 , wherein the one or more compounds of the formula A x B x C x O x includes a ratio of A:B:C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.

3. The semiconductor device of claim 1 , wherein the one or more compounds of the formula A x B x C x O x includes D x , to form a compound of the formula A x B x C x D x O x , wherein each D is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, C, and D are different.

4. The semiconductor device of claim 3 , wherein the one or more compounds of the formula includes a ratio of A:B:C:D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.

5. The semiconductor device of claim 3 , wherein the one or more compounds of formula A x B x C x D x O x includes E X , to form a compound of the formula , wherein each E is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, C, D, and E are different.

6. The semiconductor device of claim 5 , wherein the one or more compounds of the formula A x B x C x D x E x O x includes a ratio of A:B:C:D:E, wherein A, B, C, D, and E are each in a range of about 0.013 to about 0.95.

7. The semiconductor device of claim 5 , wherein the one or more compounds of formula A x B x C x D x E x O x includes F x , to form a compound of the formula A x B x C x D x E x F x O x , wherein each F is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, D, E, and F are different.

8. The semiconductor device of claim 7 , wherein the one or more compounds of the formula A x B x C x D x E x F x O x includes a ratio of A:B:C:D:E:F, wherein A, B, C, D, E, and F are each in a range of about 0.01 to about 0.95.

9. The semiconductor device of claim 7 , wherein the one or more compounds of the formula A x B x C x D x E x F x O x , includes G x , to form a compound of the formula A x B x C x D x E x F x G x O x , wherein each G is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, C, D, E, F, and G are different.

10. The semiconductor device of claim 9 , wherein the one or more compounds of the formula A x B x C x D x E x F x G x O x includes a ratio of A:B:C:D:E:F:G, wherein A, B, C, D, E, F, and G are each in a range of about 0.0085 to about 0.95.

11. The semiconductor device of claim 1 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

12. A semiconductor device, comprising:

a drain electrode;

a source electrode;

means for controlling current flow electrically coupled to the drain electrode and the source electrode, wherein the means for controlling current flow includes one or more compounds of the formula A x B x C x O x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, and each C is selected from the group of Ge, Sn, Pb; and

a gate electrode separated from the channel by a gate dielectric.

13. The semiconductor device of claim 12 , wherein the means for a channel includes a means for forming one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

14. The semiconductor device of claim 12 , wherein the source, drain, and gate electrodes include a substantially transparent material.

15. A semiconductor device formed by the steps, comprising:

providing a drain electrode;

providing a source electrode;

providing a precursor oxide composition including one or more precursor compounds that each include A x , one or more precursor compounds that each include B x , and one or more precursor compounds that each include C x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, and C are different from each other and from O;

depositing a channel including the precursor composition to form a multicomponent oxide including A x B x C x O x from the precursor composition to electrically couple the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

16. The semiconductor device of claim 15 , wherein the one or more precursor compounds includes one or more precursor compounds that include D x , wherein each D is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, C, and D are different.

17. The semiconductor device of claim 16 , wherein the one or more precursor compounds includes one or more precursor compounds that include E x , wherein each E is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, C, D, and E are different.

18. The semiconductor device of claim 17 , wherein the one or more precursor compounds includes one or more precursor compounds that include F x , wherein each F is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, C, D, E, and F are different.

19. The semiconductor device of claim 18 , wherein the one or more precursor compounds includes one or more precursor compounds that include G x , wherein each G is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, C, D, E, F, and G are different.

20. The semiconductor device of claim 19 , wherein depositing the channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.

21. The semiconductor device of claim 15 , wherein providing the source, the drain, and the gate electrodes includes providing a substantially transparent form of the source, the drain, and the gate electrodes.

22. The semiconductor device of claim 15 , wherein providing the precursor composition includes providing a liquid form of the precursor composition.

23. The semiconductor device of claim 22 , wherein depositing the channel includes an ink-jet deposition technique when the precursor composition includes the liquid form.

24. A display device, comprising:

a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula A x B x C x O x , wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen; each x is independently a non-zero integer, and wherein each of A, B, and C are different;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

25. The display of claim 24 , wherein the one or more compounds of the formula A x B x C x O x includes an atomic composition of ratio A:B:C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.

26. The display of claim 24 , wherein the source, the drain, and the gate electrodes include a substantially transparent material.

27. The display of claim 24 , wherein the one or more compounds of the formula A x B x C x O x includes D x , to form a compound of the formula A x B x C x D x O x , wherein each D is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

28. The display of claim 27 , wherein the one or more compounds of the formula A x B x C x D x O x includes an atomic composition of ratio A:B:C:D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.

29. The display of claim 27 , wherein the one or more compounds of formula A x B x C x D x O x includes E x to form a compound of the formula A x B x C x D x E x O x wherein each E is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, D, and E are different.

30. The display of claim 29 , wherein the one or more compounds of the formula A x B x C x D x E x O x includes an atomic composition of ratio A:B:C:D:E, wherein A, B, C, D, and E are each in a range of about 0.013 to about 0.95.

31. The display of claim 29 , wherein the one or more compounds of formula A x B x C x D x E x O x includes F x to form a compound of the formula A x B x C x D x E x F x O x , wherein each F is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, D, E, and F are different.

32. The display of claim 31 , wherein the one or more compounds of the formula A x B x C x D x E x F x O x includes an atomic composition of ratio A:B:C:D:E:F, wherein A, B, C, D, E, and F are each in a range of about 0.01 to about 0.95.

33. The display of claim 31 , wherein the one or more compounds of the formula A x B x C x D x E x F x O x , includes G x to form a compound of the formula A x B x C x D x E x F x G x O x wherein each G is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A, B, C, D, E, F, and G are different.

34. The display of claim 33 , wherein the one or more compounds of the formula A x B x C x D x E x F x G x O x includes an atomic composition of ratio A:B:C:D:E:F:G, wherein A, B, C, D, E, F, and G are each in a range of about 0.0085 to about 0.95.

35. The display of claim 24 , wherein the channel includes one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

36. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more of a metal oxide including zinc-gallium-germanium, zinc-gallium-tin, zinc-gallium-lead, cadmium-gallium-germanium, cadmium-gallium-tin, cadmium-gallium-lead, zinc-indium-germanium, zinc-indium-tin, zinc-indium-lead, cadmium-indium-germanium, cadmium-indium-tin, cadmium-indium-lead; and

a gate dielectric positioned between the gate electrode and the channel.

37. The semiconductor device of claim 36 , wherein the metal oxide includes one or more of zinc-gallium-germanium-oxide, zinc-gallium-tin-oxide, zinc-gallium-lead-oxide, cadmium-gallium-germanium-oxide, cadmium-gallium-tin-oxide, cadmium-gallium-lead-oxide, zinc-indium-germanium-oxide, zinc-indium-tin-oxide, zinc-indium-lead-oxide, cadmium-indium-germanium-oxide, cadmium-indium-tin-oxide, cadmium-indium-lead-oxide.

38. The semiconductor device of claim 37 , wherein the metal oxide includes an atomic composition of A:B:C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.

39. The semiconductor device of claim 36 , wherein the metal oxide includes one or more of zinc-gallium-germanium-tin oxide, cadmium-gallium-germanium-tin oxide, zinc-indium-germanium-tin oxide, cadmium-indium-germanium-tin oxide, zinc-gallium-germanium-lead oxide, cadmium-gallium-germanium-lead oxide, zinc-gallium-tin-lead oxide, cadmium-gallium-tin-lead oxide, zinc-indium-germanium-lead oxide, cadmium-indium-germanium-lead oxide, zinc-indium-tin-lead oxide, cadmium-indium-tin-lead oxide, zinc-gallium-indium-germanium oxide, cadmium-gallium-indium-germanium oxide, zinc-gallium-indium-tin oxide, cadmium-gallium-indium-tin oxide, zinc-gallium-indium-lead oxide cadmium-gallium-indium-lead oxide, zinc-cadmium-gallium-germanium oxide, zinc-cadmium-gallium-tin oxide, zinc-cadmium-gallium-lead oxide, zinc-cadmium-indium-germanium oxide, zinc-cadmium-indium-tin oxide, zinc-cadmium-indium-lead oxide.

40. The semiconductor device of claim 39 , wherein the metal oxide includes an atomic composition of A:B:C:D, wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.

41. The semiconductor device of claim 36 , wherein the metal oxide includes one or more of zinc-cadmium-gallium-indium-germanium oxide, zinc-cadmium-gallium-indium-tin oxide, zinc-cadmium-gallium-indium-lead oxide, zinc-gallium-germanium-tin-lead oxide, zinc-indium-germanium-tin-lead oxide, cadmium-gallium-germanium-tin-lead oxide, cadmium-indium-germanium-tin-lead oxide, zinc-cadmium-gallium-germanium-tin oxide, zinc-cadmium-indium-germanium-tin oxide, zinc-cadmium-gallium-germanium-lead oxide, zinc-cadmium-indium-germanium-lead oxide, zinc-cadmium-gallium-tin-lead oxide, zinc-cadmium-indium-tin-lead oxide, zinc-gallium-indium-germanium-tin oxide, cadmium-gallium-indium-germanium-tin oxide, zinc-gallium-indium-germanium-lead oxide, cadmium-gallium-indium-germanium-lead oxide, zinc-gallium-indium-tin-lead oxide, cadmium-gallium-indium-tin-lead oxide.

42. The semiconductor device of claim 41 , wherein the metal oxide includes an atomic composition of A:B:C:D:E, wherein A, B, C, D, and E are each in a range of about 0.013 to about 0.95.

43. The semiconductor device of claim 36 , wherein the metal oxide includes one or more of zinc-cadmium-gallium-indium-germanium-tin oxide, zinc-cadmium-gallium-indium-germanium-lead oxide, zinc-cadmium-gallium-indium-tin-lead oxide, zinc-cadmium-gallium-germanium-tin-lead oxide, zinc-cadmium-indium-germanium-tin-lead oxide, zinc-gallium-indium-germanium-tin-lead oxide, cadmium-gallium-indium-germanium-tin-lead oxide.

44. The semiconductor device of claim 43 , wherein the metal oxide includes an atomic composition of A:B:C:D:E:F, wherein A, B, C, D, E, and F are each in a range of about 0.01 to about 0.95.

45. The semiconductor device of claim 36 , wherein the metal oxide includes one or more of zinc-cadmium-gallium-indium-germanium-tin-lead oxide.

46. The semiconductor device of claim 45 , wherein the metal oxide includes an atomic composition of A:B:C:D:E:F:G, wherein A, B, C, D, E, F, and G are each in a range of about 0.0085 to about 0.95.