Thin film capacitor using conductive polymers

1. A thin film capacitor comprising:

(a) a substrate,

(b) a first polymeric film comprising an electrically conductive polymer located on the substrate,

(c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, and located on a surface of the first polymeric film,

(d) a second polymeric film comprising an electrically conductive polymer located on a surface of the pentoxide layer.

2. The thin film capacitor of claim 1 , wherein the substrate is selected from the group consisting of vinyl polymers, olefin polymers, polyesters, and mixtures thereof.

3. The thin film capacitor of claim 1 , wherein the first polymeric film and the second polymeric film is selected from the group consisting of polyanilin polymers, ligno-sulfonic acid polymers, poly pyrrol polymers, thiophene-based polymers, and mixtures thereof.

4. The thin film capacitor of claim 1 , wherein the first polymeric film has a thickness ranging from about 100 nanometers to about 10 micrometers.

5. The thin film capacitor of claim 1 , wherein the pentoxide layer has a thickness ranging from about 10 to about 100 nanometers.

6. The thin film capacitor wherein the substrate has a thickness that is at least about 0.01 mm.

7. The thin film capacitor of claim 1 , wherein the first polymeric film or the second polymeric film is selected from the group consisting of polythiophene-based polymers, polyaniline-based polymers, polypyrrole-based polymers, polyethyleneoxide-based polymers, and mixtures or copolymers thereof.

8. A method for making a thin film capacitor comprising:

(a) applying a first electrically conductive polymer located on a substrate,

(b) applying a pentoxide layer, tantalum pentoxide, or niobium pentoxide, or mixtures thereof to the polymeric conductive layer, and

(c) applying a second electrically conductive polymer located on the pentoxide layer, and thereby forming a thin film capacitor.

9. The method of claim 8 , wherein the thin film capacitor formed comprises:

(a) a substrate,

(b) a first polymeric film comprising an electrically conductive polymer located on the substrate,

(c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, located on a surface of the first polymeric film,

(d) a second polymeric film comprising an electrically conductive polymer located on a surface of the pentoxide layer.

10. The method of claim 8 , wherein the thin film capacitor comprises (a) a substrate, (b) a first polymeric conductive layer located on a surface of the substrate and (c) a plurality of alternating pentoxide layer/polymeric electrically conductive layers extending from the first polymeric layer, wherein the total number of pentoxide layers is n and the total number of polymeric conductive layers is n+1.

11. The method of claim 8 , wherein the wherein the first polymeric film and the second polymeric film is selected from the group consisting of polyaniline-based polymers, polypyrrole-based polymers, polyethyleneoxide-based polymers, polythiophene-based polymers, and mixtures or copolymers thereof.