IP Library › Granted Patent US 7,057,208
Granted Patent B2
US 7,057,208 · App. 10/802,040 · Granted Jun 6, 2006

Display device and manufacturing method thereof

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,057,208
App. No.
10/802,040
Granted
Jun 6, 2006
Kind
B2
Abstract

It is an object of the present invention to provide a display device that has a structure of an electrode where a residue of a transparent conductive film is not generated when a weak acid solution is used in etching, which is particularly appropriate for an electrode of a light-emitting element. A display device according to the present invention has an electrode that has a laminated structure of laminated transparent conductive films, and the electrode has a first transparent conductive film as the bottom layer, where no residue is generated when a weak acid solution is used in etching, and a second transparent conductive film as the top layer, which has a work function of 5.0 eV or more.

Claims (30)

1. A display device comprising a transistor and an electrode electrically connected to the transistor,

wherein the electrode comprises a first transparent conductive film comprising indium tin oxide containing one or both of silicon oxide and silicon as the bottom layer, and a second transparent conductive film comprising indium tin oxide as the top layer.

2. The display device according to claim 1 , wherein the second transparent conductive film has a film thickness of 30 nm or less.

3. The display device according to claim 1 , wherein a terminal portion of a flexible printed circuit has a laminated structure of a conductive film that has a specific resistance of 3 μΩ or less, the first transparent conductive film, and the second transparent conductive film.

4. The display device according to claim 1 , wherein a silicon nitride film is provided below the first transparent conductive film.

5. The display device according to claim 1 , wherein the display device is applied in an electronic device selected from the group consisting of a video camera, a laptop personal computer, a personal digital assistant, a digital camera and a mobile phone.

6. A display device comprising a transistor and an electrode electrically connected to the transistor,

wherein the electrode comprises a first transparent conductive film comprising indium tin oxide containing one or both of silicon oxide and silicon as the bottom layer, and a second transparent conductive film that has a work function of 5.0 eV or more as the top layer.

7. The display device according to claim 6 , wherein the second transparent conductive film has a film thickness of 30 nm or less.

8. The display device according to claim 6 , wherein a terminal portion of a flexible printed circuit has a laminated structure of a conductive film that has a specific resistance of 3 μΩ or less, the first transparent conductive film, and the second transparent conductive film.

9. The display device according to claim 6 , wherein a silicon nitride film is provided below the first transparent conductive film.

10. The display device according to claim 6 , wherein the display device is applied in an electronic device selected from the group consisting of a video camera, a laptop personal computer, a personal digital assistant, a digital camera and a mobile phone.

11. A display device comprising a transistor and an electrode electrically connected to the transistor,

wherein the electrode comprises a first amorphous transparent conductive film as the bottom layer and a second crystalline transparent conductive film as the top layer.

12. The display device according to claim 11 , wherein the second transparent conductive film has a film thickness of 30 nm or less.

13. The display device according to claim 11 , wherein a terminal portion of a flexible printed circuit has a laminated structure of a conductive film that has a specific resistance of 3 μΩ or less, the first transparent conductive film, and the second transparent conductive film.

14. The display device according to claim 11 , wherein a silicon nitride film is provided below the first transparent conductive film.

15. The display device according to claim 11 , wherein the display device is applied in an electronic device selected from the group consisting of a video camera, a laptop personal computer, a personal digital assistant, a digital camera and a mobile phone.

16. A display device comprising a transistor and an electrode electrically connected to the transistor,

wherein the electrode comprises a first transparent conductive film comprising amorphous indium tin oxide as the bottom layer and a second transparent conductive film comprising crystalline indium tin oxide as the top layer.

17. The display device according to claim 16 , wherein the second transparent conductive film has a film thickness of 30 nm or less.

18. The display device according to claim 16 , wherein a terminal portion of a flexible printed circuit has a laminated structure of a conductive film that has a specific resistance of 3 μΩ or less, the first transparent conductive film, and the second transparent conductive film.

19. The display device according to claim 16 , wherein a silicon nitride film is provided below the first transparent conductive film.

20. The display device according to claim 16 , wherein the display device is applied in an electronic device selected from the group consisting of a video camera, a laptop personal computer, a personal digital assistant, a digital camera and a mobile phone.

21. A display device comprising a transistor and an electrode electrically connected to the transistor,

wherein the electrode comprises a first transparent conductive film including oxygen at 61 atomic %, indium at 34 atomic %, tin at 2 atomic %, and silicon at 3 atomic % as the bottom layer, and a second transparent conductive film including oxygen at 62 atomic %, indium at 36 atomic %, and tin at 2 atomic % as the top layer.

22. The display device according to claim 21 , wherein the second transparent conductive film has a film thickness of 30 nm or less.

23. The display device according to claim 21 , wherein a terminal portion of a flexible printed circuit has a laminated structure of a conductive film that has a specific resistance of 3 μΩ or less, the first transparent conductive film, and the second transparent conductive film.

24. The display device according to claim 21 , wherein a silicon nitride film is provided below the first transparent conductive film.

25. The display device according to claim 21 , wherein the display device is applied in an electronic device selected from the group consisting of a video camera, a laptop personal computer, a personal digital assistant, a digital camera and a mobile phone.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 4, 2004
From: AKIMOTO, KENGO; MIYAGI, NORIKO; EGUCHI, SHINGO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 015654/0065 →
Priority Claims (1)
JP 2003-083120 · Mar 25, 2003 · national
Continuity (1)
Related Publication 20040241931A1 · Dec 2, 2004