Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
View Patent ↗An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal source composition on the first SiO 2 layer, and a second SiO 2 layer on the Group II metal source composition layer.
1. An improved p-type gallium nitride-based semiconductor device comprising:
a device structure that includes at least one p-type Group III nitride layer that includes some gallium;
a plurality of silicon dioxide portions on said p-type Group III nitride layer;
a portion of a Group II metal source composition layer on each of said silicon dioxide portions; and
a second silicon dioxide layer on said Group II metal source composition layer,
wherein said second silicon dioxide layer is limited to said source composition layer portions.
2. An improved p-type gallium nitride-based semiconductor device comprising:
a conductive silicon carbide substrate;
a conductive buffer layer on said silicon carbide substrate for providing a crystal transition between said substrate and Group III nitride portions of said device;
an n-type Group III nitride layer on said buffer layer;
a p-type Group III nitride layer that includes some gallium directly on said n-type layer and forms a p-n junction;
a plurality of silicon dioxide portions on said p-type Group III nitride layer;
a portion of a magnesium source composition layer on each of said silicon dioxide portions; and
a second silicon dioxide layer on said magnesium source composition layer,
wherein said second silicon dioxide layer is limited to said magnesium source composition layer portions.