Method for manufacturing a semiconductor device and method for forming high-dielectric-constant film
View Patent ↗A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon substrate, an Hf silicate film is formed on the silicon oxide film, and a nitrogen-containing Hf silicate film formed on the Hf silicate film, and containing Hf in a peak concentration in a range from one atomic % to thirty atomic %, and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic %.
1. A method of manufacturing a semiconductor device comprising:
forming a base interface layer on a substrate;
forming a metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic % on said base interface layer;
forming a nitrogen-containing metal silicate film containing nitrogen in a peak concentration in a range from ten atomic % to thirty atomic % on said metal silicate film; and
forming a gate electrode on said nitrogen-containing metal silicate film, wherein forming said metal silicate film includes, repeatedly:
forming a metal oxide film by supplying a metal-containing material, and then supplying an oxygen-based gas, to said substrate;
forming a silicon oxide film by supplying a silicon-containing material, and then supplying an oxygen-based gas, to said substrate; and
controlling the number of cycles of forming said metal oxide film and forming said silicon oxide film.
2. The method of manufacturing a semiconductor device according to claim 1 , including repeatedly forming said metal oxide film by:
supplying said metal-containing material to said substrate;
supplying said oxygen-based gas to said substrate; and
radiating the surface of said substrate with light for up to several milliseconds.
3. The method of manufacturing a semiconductor device according to claim 1 , including repeatedly forming said silicon oxide film by:
supplying said silicon-containing material to said substrate;
supplying said oxygen-based gas to said substrate; and
radiating the surface of said substrate with light for up to several milliseconds.
4. A method of manufacturing a semiconductor device comprising:
forming a base interface layer on a substrate;
forming a metal silicate film containing a metal in a peak concentration in a range from five atomic % to forty atomic % on said base interface layer;
forming a nitrogen-containing metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic % and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic % on said metal silicate film; and
forming a gate electrode on said nitrogen-containing metal silicate film, wherein forming said metal silicate film includes, repeatedly:
forming a metal oxide film by supplying a metal-containing material, and then supplying an oxygen-based gas, to said substrate;
forming a silicon oxide film by supplying a silicon-containing material, and then supplying an oxygen-based gas, to said substrate; and
controlling the number of cycles of forming said metal oxide film and forming said silicon oxide film.
5. The method of manufacturing a semiconductor device according to claim 4 , including repeatedly forming said metal oxide film by:
supplying said metal-containing material to said substrate;
supplying said oxygen-based gas to said substrate; and
radiating the surface of said substrate with light for up to several milliseconds.
6. The method of manufacturing a semiconductor device according to claim 4 , including repeatedly forming said silicon oxide film by:
supplying said silicon-containing material to said substrate;
supplying said oxygen-based gas to said substrate; and
radiating the surface of said substrate with light for up to several milliseconds.
7. A method of manufacturing a semiconductor device comprising:
forming a base interface layer on a substrate;
forming a metal silicate film containing a metal in a peak concentration in a range from five atomic % to forty atomic % on said base interface layer;
forming a nitrogen-containing metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic % and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic % on said metal silicate film; and
forming a gate electrode on said nitrogen-containing metal silicate film, wherein forming said nitrogen-containing metal silicate film comprises:
forming a base metal silicate film containing a metal in a peak concentration in a range from one atomic % to thirty atomic %; and
introducing nitrogen into said base metal silicate film in a peak concentration in a range from ten atomic % to thirty atomic % by nitriding said metal silicate film.
8. The method of manufacturing a semiconductor device according to claim 7 , wherein forming a base metal silicate film includes:
forming a metal oxide film by supplying a metal-containing material, and then supplying an oxygen-based gas, to said substrate; and
forming a silicon oxide film by supplying a silicon-containing material, and then supplying an oxygen-based gas, to said substrate; and
controlling the number of cycles of forming said metal oxide film and forming said silicon oxide film to form said metal silicate film.
9. The method of manufacturing a semiconductor device according to claim 8 , including repeatedly forming said metal oxide film by:
supplying said metal-containing material to said substrate;
supplying said oxygen-based gas to said substrate; and
radiating the surface of said substrate with light for up to several milliseconds.
10. The method of manufacturing a semiconductor device according to claim 8 , including repeatedly forming said silicon oxide film by:
supplying said silicon-containing material to said substrate;
supplying said oxygen-based gas to said substrate; and
radiating the surface of said substrate with light for up to several milliseconds.
11. A method of forming a high-dielectric-constant film on a substrate comprising sequentially:
supplying a first source gas that contains at least one element of elements constituting a high-dielectric-constant film into a housing where a substrate is located;
after stopping supplying of the first source gas, supplying a second source gas into the housing, the second source gas reacting with said first source gas and forming the high-dielectric-constant film; and
after stopping supplying of the second source gas, heating the surface of the substrate by radiating the surface of the substrate with light for up to several milliseconds.
12. The method for forming a high-dielectric-constant film according to claim 11 , including radiating the substrate with light for a time in a range of 0.8 to 20 miliseconds.