Wafer stacking using interconnect structures of substantially uniform height
Wafer stacking employing substantially uniform copper structures is described herein.
1. An apparatus comprising:
a first wafer having a first interlayer dielectric layer and a first plurality of copper structures of first substantially uniform heights with each difference between any two of the first substantially uniform heights being 5 nm or less, disposed on the first interlayer dielectric layer; and
a second wafer having a second interlayer dielectric layer and a second plurality of copper structures of second substantially uniform heights with each difference between any two of the second substantially uniform heights being 5 nm or less, disposed on the second interlayer dielectric layer, the second wafer being stacked on the first wafer, with at least some of the first and second plurality of copper structures being substantially aligned and bonded to each other.
2. The apparatus of claim 1 , wherein at least a selected one of the first and second substantially uniform heights is in a range of 100–300 nm.
3. The apparatus of claim 2 , wherein both the first and second substantially uniform heights are in the range of 100–300 nm.
4. A system comprising:
a semiconductor package having
a first die having a first interlayer dielectric layer and a first plurality of copper structures of first substantially uniform heights disposed on the first interlayer dielectric layer, where each difference between any two of the first substantially uniform heights is 5 nm or less; and
a second die having a second interlayer dielectric layer and a second plurality of copper structures of second substantially uniform heights disposed on the second interlayer dielectric layer, where each difference between any two of the second substantially uniform heights is 5 nm or less, the second die being stacked on the first die, with at least some of the first and second plurality of copper structures being substantially aligned and bonded to each other;
a bus coupled to the semiconductor package; and
a networking interface component coupled to the bus.
5. The system of claim 4 , wherein at least a selected one of the first and second substantially uniform heights of the semiconductor package is in a range of 100–300 nm.
6. The system of claim 5 , wherein both of the first and second substantially uniform heights of the semiconductor package is in the range of 100–300 nm.
7. The system of claim 4 , wherein the system is a selected one of a digital versatile disk player and a set-top box.
8. An apparatus comprising:
a first wafer having a first interlayer dielectric layer and a first plurality of electrically conductive structures of first substantially uniform heights with each difference between any two of the first substantially uniform heights being in a range of 1 nm to 5 nm, disposed on the first interlayer dielectric layer; and
a second wafer having a second interlayer dielectric layer and a second plurality of electrically conductive structures of second substantially uniform heights with each difference between any two of the first substantially uniform heights being in a range of 1 nm to 5 nm, disposed on the second interlayer dielectric layer, the second wafer being stacked on the first wafer, with at least some of the first and second plurality of electrically conductive structures being substantially aligned and bonded to each other.
9. The apparatus of claim 8 , wherein at least a selected one of the first and second substantially uniform heights is in a range of 100 nm to 300 nm.
10. The apparatus of claim 8 , wherein both the first and second substantially uniform heights are in the range of 100 nm to 300 nm.
11. A system comprising:
a semiconductor package having
a first die having a first interlayer dielectric layer and a first plurality of electrically conductive structures of first substantially uniform heights with each difference between any two of the first substantially uniform heights being in a range of 1 nm to 5 nm; and
a second die having a second interlayer dielectric layer and a second plurality of electrically conductive structures of second substantially uniform heights with each difference between any two of the second substantially uniform heights being in a range of 1 nm to 5 nm, the second die being stacked on the first die, with at least some of the first and second plurality of copper structures being substantially aligned and bonded to each other;
a bus coupled to the semiconductor package; and
a networking interface component coupled to the bus.
12. The system of claim 11 , wherein at least a selected one of the first and second substantially uniform heights of the semiconductor package is in a range of 100 nm to 300 nm.
13. The system of claim 12 , wherein both of the first and second substantially uniform heights of the semiconductor package is in the range of 100 nm to 300 nm.
14. The system of claim 11 , wherein the system is a selected one of a digital versatile disk player and a set-top box.