IP Library Granted Patent US 7,227,292
Granted Patent B2
US 7,227,292 · App. 10/817,888 · Granted Jun 5, 2007

Methods of depositing piezoelectric films

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Quick Facts
Patent No.
US 7,227,292
App. No.
10/817,888
Granted
Jun 5, 2007
Kind
B2
Abstract

This invention relates to methods of depositing piezoelectric films such as in part of a stack including depositing a piezoelectric layer, measuring the thickness of the layer and depositing a further film or films such that the combined thickness is substantially equal to the target thickness.

Claims (15)

1. A method of depositing a stack of layers of a target thickness to provide a predetermined resonant frequency including depositing a piezoelectric layer, performing in situ a measurement of the thickness of the layer and depositing a further film or films such that the combined thickness of the stack is substantially equal to the target thickness.

2. A method as claimed in claim 1 wherein the film is the same material as the layer.

3. A method as claimed in claim 2 wherein the film is deposited in the same chamber as the layer.

4. A method as claimed in claim 1 wherein a further film is an electrode.

5. A method as claimed in claim 1 wherein the film is a different material to the layer.

6. A method as claimed in claim 5 wherein the film is an electrically conducting material.

7. A method as claimed in claim 6 wherein the film is at least part of a conducting electrode.

8. A method as claimed in claim 1 wherein the layer is optically transparent.

9. A method as claimed in claim 8 wherein the layer is AIN.

10. A method as claimed in claim 8 wherein the thickness is measured optically.

11. A method as claimed in claim 1 wherein the stack extends across at least part of a workpiece and the measuring step takes place at multiple points to allow the target thickness to be achieved substantially across the part of the workpiece.

12. A method of depositing a stack of layers of a target thickness to provide a resonant frequency including depositing an optically transparent piezoelectric layer and performing in situ an optical measurement of the thickness of the layer and depositing a further film or films such that the construed thickness of the stack is substantially equal to the target thickness.

13. A method as claimed in claim 12 wherein the film is the same material as the layer.

14. A method of forming a resonator having a predetermined resonator frequency including depositing an electrode, depositing a piezoelectric layer using the method as claimed in any one of the preceding claims and depositing a further electrode if one has not been deposited in a preceding step.

15. A method of depositing a piezoelectric layer as part of a resonant structure of predetermined resonant frequency, including depositing a layer of piezoelectric material having a thickness of less than a target thickness, performing in situ a measurement of the thickness of the deposited layer and depositing a film on the layer such that the thickness of the resonant structure including the film and the layer is substantially equal to the target thickness.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Jul 5, 2016
From: JPMORGAN CHASE BANK, N.A.
To: SPTS TECHNOLOGIES LIMITED
Reel/Frame 039257/0026 →
SECURITY INTEREST Recorded Apr 2, 2015
From: SPTS TECHNOLOGIES LIMITED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 035364/0295 →
CHANGE OF NAME Recorded Mar 1, 2007
From: TRIKON TECHNOLOGIES LIMITED
To: AVIZA TECHNOLOGY LIMITED
Reel/Frame 018972/0945 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2004
From: RICH, PAUL; FORD, MARK ASHLEY
To: TRIKON TECHNOLOGIES LIMITED
Reel/Frame 015194/0974 →