Method for forming contact in semiconductor device

1. A method for forming a contact in a semiconductor device, comprising the steps of:

forming a P-type source/drain junction in a substrate;

forming an inter-layer insulation layer on the substrate;

forming a contact hole exposing at least one portion of the P-type source/drain junction by etching the inter-layer insulation layer;

forming a plug ion implantation region by implanting boron fluoride ions into the exposed portion of the P-type source/drain junction, the boron fluoride ion having the less bonding number of fluorine than 49 BF 2 ;

performing an activation annealing process for activating dopants implanted into the plug ion implantation region; and

forming a contact connected to the P-type source/drain junction through the contact hole.

2. The method as recited in claim 1 , wherein at the step of forming the plug ion implantation region, the boron fluoride ions are 30 BF.

3. The method as recited in claim 2 , wherein the 30 BF ions are ion-implanted by controlling a dose thereof to be within a range from approximately 100% to approximately 150% of that of 49 BF 2 ions which are used in a conventional method.

4. The method as recited in claim 2 , wherein the 30 BF ions are implanted by applying ion implantation energy decreased by about 30/49, which is a ratio of molecular mass decrement, with respect to the ion implantation energy applied when the 49 BF 2 ions are used.

5. The method as recited in claim 1 , wherein the activation annealing process adopts a rapid thermal annealing process and is performed at a temperature ranging from approximately 600° C. to approximately 800° C.

6. A method for forming a contact in a semiconductor device, comprising the steps of:

forming a P-type source/drain junction on a substrate;

forming an inter-layer insulation layer on the substrate;

forming a contact hole exposing a partial portion of the P-type source/drain junction by etching the inter-layer insulation layer;

forming a plug ion implantation region by implanting 30 BF ions into the exposed portion of the P-type source/drain region;

performing an activation annealing process for activating dopants ion-implanted into the plug ion implantation region; and

forming a contact connected to the P-type source/drain junction through the contact hole.

7. The method as recited in claim 6 , wherein at the step of forming the plug ion implantation region, the 30 BF ions are implanted with a dose ranging from approximately 1×10 15 ions/cm 2 to approximately 5×10 15 ions/cm 2 .

8. The method as recited in claim 6 , wherein the activation annealing process adopts a rapid thermal annealing process and is performed at a temperature ranging from approximately 600° C. to approximately 800° C.

9. The method as recited in claim 8 , wherein the activation annealing process adopting the rapid thermal annealing process proceeds by flowing a purge gas of nitrogen with a quantity ranging from approximately 1 slm to approximately 25 slm under a heating rate in a range from approximately 10° C. per second to approximately 100° C. per second.