Process modules for transport polymerization of low epsilon thin films
A Process Module (“PM”) is designed to facilitate Transport Polymerization (“TP”) of precursors that are useful for preparations of low Dielectric Constant (“∈”) films. The PM consists primarily of a Material Delivery System (“MDS”) with a high temperature Vapor Phase Controller (“VFC”), a TP Reactor, a Treatment Chamber, a Deposition Chamber and a Pumping System. The PM is designed to facilitate TP for new precursors and for film deposition and stabilization processes.
1 . A process module for transport-polymerization (“TP”) of a precursor comprising:
(a) a material delivery subsystem adapted to deliver the precursor to a TP reactor;
(b) the TP reactor adapted to receive the precursor and to generate an intermediate;
(c) a deposition chamber designed to produce a polymer film onto a substrate under a vacuum; and
(d) one or more substrate pre-/post-treatment chambers designed to remove contamination from the substrate and to stabilize the polymer film on the substrate under the vacuum.
2 . The process modules of claim 1 , further comprising a pump cold-trap in fluid communication with the deposition chamber to prevent organic residuals from passing from the deposition chamber into a pump system.
3 . The process module of claim 2 , wherein the cold trap is at a temperature below −50° C. during the precursor deposition.
4 . The process modules of claim 1 , further comprising a pump system in fluid communication with a pump cold-trap to provide the vacuum for the deposition chamber.
5 . The process modules of claim 1 , further comprising a reactor cleaning subsystem mounted to the TP reactor to purge the reactor of organic residues.
6 . The process module of claim 1 , further comprising a TP trap, interposing the TP reactor and the deposition chamber, and adapted to confine undesirable chemicals generated in the TP reactor.
7 . The process module of claim 6 , wherein the TP Trap contains porous quartz and is maintains a temperature that is at least 10° C. higher than a ceiling temperature (“T cl ”) of reactive intermediates that are generated from the TP Reactor.
8 . The process module of claim 6 , wherein the TP Trap comprises reactive metal turnings that are kept at a temperature ranging from 200° C. to 450° C.
9 . The process module of claim 6 , wherein the TP Trap comprises reactive metal turnings that are kept at a temperature ranging from 300° C. to 350° C.
10 . The process module of claim 9 , wherein the reactive metal turnings are copper or zinc.
11 . The process modules of claim 1 , wherein the precursor has the following general chemical structure:
wherein, n o or m are individually zero or an integer, and (n o +m) comprises an integer of at least 2 but no more than a total number of sp 2 C-X substitution on the aromatic-group-moiety (“AR”);
Ar is an aromatic or a fluorinated-aromatic group moiety;
Z′ and Z″ are similar or different, and individually a hydrogen, a fluorine, an alkyl group, a fluorinated alkyl group, a phenyl group or a fluorinated phenyl group;
X is a leaving group, and individually a —COOH, —I, —NR 2 , —N + R 3 , —SR, —SO 2 R, wherein R is an alkyl, a fluorinated alkyl, aromatic or fluorinated aromatic group; and
Y is a leaving group, and individually a —Cl, —Br, —I, —NR 2 , —N + R 3 , —SR, —SO 2 R, or —OR, wherein R is an alkyl, a fluorinated alkyl, aromatic or fluorinated aromatic group.
12 . The process module of claim 11 , wherein a bonding energy between the leaving group (“(BE) L ”) and a core group of the precursor comprises a value less than 75 Kcal/Mole, and the range of the (BE) L comprises a range of 20 to 45 Kcal/Mole lower than a bonding energy of a next weakest chemical bond energy (“(BE) c ”) present in the precursor.
13 . The process module of claim 1 , wherein the material delivery subsystem comprises:
(a) a sample container for holding the precursor;
(b) a heater to vaporize the precursor; and
(c) a feed control component to regulate the flow rate of the vaporized precursor.
14 . The process module of claim 13 , wherein the sample container comprises a non-corrosive material that can be heated from room temperature to 150° C.; and can withstand the vacuum.
15 . The process module of claim 14 , wherein the non-corrosive material comprises borosilicate glass, stainless steel, or ceramic quartz.
16 . The process module of claim 13 , wherein the feed control component comprises a liquid mass flow controller (“LMFC”) or a vapor flow controller (“VFC”).
17 . The process module of claim 16 , wherein the LMFC delivers precursors at a rate in a range of 0.5 to 10 g/hour to a wafer.
18 . The process module of claim 17 , wherein the rate of precursors delivery to a 200 mm wafer is in a range of 1.0 to 5 g/hour, and the rate of precursor delivery to a 300 mm is in a range of 2 to 10 g/hour.
19 . A method for cleaning a deactivated reactor having an organic residue comprising:
oxidizing the organic residues inside the deactivated reactor; and
purging the TP reactor with a gas.
20 . The method of claim 19 , wherein the gas is nitrogen.