Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
A self-supported nitride semiconductor substrate of 10 mm or more in diameter having an X-ray diffraction half width of 500 seconds or less in at least one of a {20-24} diffraction plane and a {11-24} diffraction plane.
1. A self-supported nitride semiconductor substrate having an X-ray diffraction half width of 50 seconds or less in a {20-24} diffraction plane, and a diameter of 10 mm or more and a thickness of 200 μm or more.
2. The self-supported nitride semiconductor substrate according to claim 1 , wherein said nitride semiconductor is undoped, or n- or p-type, and has a carrier density of 1×10 20 cm −3 or less.
3. A method for producing a self-supported nitride semiconductor substrate as claimed in claim 1 , said method comprising (1) forming a first nitride semiconductor layer having a dislocation density of 10 n /cm 2 (0≦n≦10) on a base substrate; (2) forming a mask layer made of another material than said nitride semiconductor on said first nitride semiconductor layer; (3) providing said mask layer with openings having an area of 10 −n cm 2 or less, which penetrate said mask layer in a thickness direction, at a density of 10 n−2 /cm 2 or less; (4) forming a second nitride semiconductor layer having a thickness of 200 μm or more on said mask layer; and (5) removing said base substrate, said first nitride semiconductor layer, and said mask layer.
4. The method for producing a self-supported nitride semiconductor substrate according to claim 3 , wherein said openings were at a density of 10 n−4 /cm 2 or less in said mask layer.
5. The method for producing a self-supported nitride semiconductor substrate according to 3, wherein the growing of said nitride semiconductor is carried out by a sublimation method, a metal-organic vapor phase epitaxy method, a hydride vapor-phase epitaxy method, a liquid-phase epitaxy method or a combination thereof.
6. The method for producing a self-supported nitride semiconductor substrate according to claim 3 , wherein said base substrate is made of a different material from that of said self-supported nitride semiconductor substrate.
7. The method for producing a self-supported nitride semiconductor substrate according to claim 3 , wherein said first nitride semiconductor layer is formed on said base substrate via a buffer layer.
8. A light-emitting nitride semiconductor device comprising an epitaxial nitride layer with a light-emitting device structure formed on a self-supported nitride semiconductor substrate having an X-ray diffraction half width of 50 seconds or less in a {20-24} diffraction plane, a diameter of 10 mm or more and a thickness of 200 μm or more.