Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
View Patent ↗Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R 1 ) m M(PR 2 3 ) x , where M is a metal selected from the group consisting of manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium iridium and platinum wherein m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x are 2, 3, 4, 5, 6, 7 or 8, m and x selected according to each metals appropriate valence; each R 1 is independently selected from the group consisting of hydrogen, deuterium, N 2 , H 2 , D 2 and a variety of substituted alkyl groups; each R 2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, and alkyl-Z, aryl-Z and arylalkyl-Z where Z is selected from the group consisting of oxy, silyl, siloxy, oxysilyl, siloxy, oxysiloxy, silyalkyl, oxysilylalkyl, siloxyalkyl, oxysiloxyalkyl, silylalkoxy, silylalkoxy, siloxyalkoxy and oxysiloxyalkoxy; and wherein when M is cobalt and one group R 1 is selected to be N 2 , then m is 2 and the second group R 1 is hydrogen or deuterium.
1. A method for forming a powder containing a metal or metal derivative comprising: providing a medium; dispersing a vapor or liquid into the medium, the vapor or liquid containing an organometallic compound; and heating the medium to a temperature at or above the thermal decomposition temperature of the organometallic compound, wherein the organometallic compound has the formula (R 1 ) m M(PR 2 3 ) x , where M is a metal selected from a Group VIIb, VIII, IX or X metal wherein (a) when M is manganese, technetium or rhenium, m is 1, x is 5 and m+x is 6; (b) when M is iron, ruthenium or osmium, m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x is 4, 5, 6 or 7; (c) when M is cobalt, rhodium or iridium, m is 1, 2, 3 or 4 and x is 2, 3 or 4 and m+x is 4, 5, 6, 7 or 8; and (d) when M is nickel, palladium or platinum, m is 0 or 2, x is 2, 3 or 4 and m+x is 2, 3, 4, 5 or 6; each R 1 is independently selected from the group consisting of hydrogen, deuterium, N 2 , H 2 , D 2 and a group of the formula —CR 3 2 —CR 3 2 —R 4 ; each R 2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, alkoxy, aryloxy, arylalkoxy, alkylsilyl, arylsilyl, arylalkylsilyl, alkoxysilyl, aryloxysilyl, arylalkoxysilyl, alkylsiloxy, arylsiloxy, arylalkylsiloxy, alkoxysiloxy, aryloxysiloxy, arylalkoxysiloxy, alkylsilylalkyl, arylsilylalkyl, arylalkysilylalkyl, alkoxysilylalkyl, aryloxysilylalkyl, arylalkoxysilylalkyl, alkylsiloxyalkyl, arylsiloxyalkyl, arylalkylsiloxyalkyl, alkoxysiloxyalkyl, aryloxysiloxyalkyl, arylalkoxysiloxyalkyl, alkylsilylalkoxy, arylsilylalkoxy, arylalkylsilylalkoxy, alkoxysilylalkoxy, aryloxysilylalkoxy arylalkyloxysilylalkoxy, alkylsiloxyalkoxy, arylsiloxyalkoxy, arylalkylsiloxyalkoxy, alkoxysiloxyalkoxy, aryloxysiloxyalkoxy, and arylalkoxysiloxyalkoxy; each R 3 is independently selected from the group consisting of hydrogen, deuterium, C 1 -C 6 alkyl, C 1 -C 6 cycloalkyl, phenyl, benzyl, (C 1 -C 2 alkyl or alkoxy) 3 -silyl, and (C 1 -C 2 alkyl or alkoxy)3-siloxy and wherein at least two groups R 3 are selected from the group consisting of hydrogen and deuterium, R 4 is hydrogen or deuterium; and wherein when M is cobalt and one group R 1 is selected to be N 2 , then m is 2 and the second group R 1 is hydrogen or deuterium.
2. A method for forming a powder containing a metal or metal derivative comprising: providing a medium; heating the medium; dispersing a vapor or liquid into the medium to form a dispersion, and subjecting the dispersion to a secondary energy source, the vapor or liquid containing an organometallic compound of having the formula (R 1 ) m M(PR 2 3 ) x , where M is a metal selected from a Group VIIb, VIII, IX or X metal wherein (a) when M is manganese, technetium or rhenium, m is 1, x is 5 and m+x is 6; (b) when M is iron, ruthenium or osmium, m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x is 4, 5, 6 or 7; (c) when M is cobalt, rhodium or iridium, m is 1, 2, 3 or 4 and x is 2, 3 or 4 and m+x is 4, 5, 6, 7 or 8; and (d) when M is nickel, palladium or platinum, m is 0 or 2, x is 2, 3 or 4 and m+x is 2, 3, 4, 5 or 6; each R 1 is independently selected from the group consisting of hydrogen, deuterium, N 2 , H 2 , D 2 and a group of the formula —CR 3 2 —CR 3 2 —R 4 ; each R 2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, alkoxy, aryloxy, arylalkoxy, alkylsilyl, arylsilyl, arylalkylsilyl, alkoxysilyl, aryloxysilyl, arylalkoxysilyl, alkylsiloxy, arylsiloxy, arylalkylsiloxy, alkoxysiloxy, aryloxysiloxy, arylalkoxysiloxy, alkylsilylalkyl, arylsilylalkyl, arylailcysilylalkyl, alkoxysilylalkyl, aryloxysilylalkyl, arylalkoxysilylalkyl, alkylsiloxyalkyl, arylsiloxyalkyl, arylalkylsiloxyalkyl, alkoxysiloxyalkyl, aryloxysiloxyalkyl, arylalkoxysiloxyalkyl, ailcylsilylalkoxy, arylsilylalkoxy, arylalkylsilylalkoxy, alkoxysilylalkoxy, aryloxysilylalkoxy arylalkyloxysilylalkoxy, alkylsiloxyalkoxy, arylsiloxyalkoxy, arylalkylsiloxyalkoxy, alkoxysiloxyalkoxy, aryloxysiloxyalkoxy, and arylalkoxysiloxyalkoxy; each R 3 is independently selected from the group consisting of hydrogen, deuterium, C 1 -C 6 alkyl, C 1 -C 6 cycloalkyl, phenyl, benzyl, (C 1 -C 2 alkyl or alkoxy) 3 -silyl, and (C 1 -C 2 alkyl or alkoxy)3-siloxy and wherein at least two groups R 3 are selected from the group consisting of hydrogen and deuterium, R4 is hydrogen or deuterium; and wherein when M is cobalt and one group R 1 selected to be N 2 , then m is 2 and the second group R 1 is hydrogen or deuterium.
3. The method of claim 2 , wherein the secondary energy source is selected from the group consisting of a plasma source, an e-beam source, a molecular beam source and a laser source.