Semiconductor memory device

1. A semiconductor memory device comprising:

a plurality of word lines including one or more redundant word lines;

a plurality of pairs of bit lines;

a plurality of memory cells connected to said plurality of word lines and said plurality of pairs of bit lines;

a plurality of word-line drivers, each of which is connected to one end of each of said plurality of word lines and controlled by a plurality of word-line control signals; and

a plurality of first word-line control circuits respectively located at the other ends of said plurality of word lines, each of said plurality of first word-line control circuits receiving a signal level of a corresponding one of said plurality of word lines, wherein

in the case where the signal level of said corresponding word line is a first level at which corresponding ones of said plurality of memory cells connected to said corresponding word line go into a high impedance state, each of said plurality of first word-line control circuits switches to a conducting state and outputs a signal of said first level to said corresponding word line, and

in the case where the signal level of said corresponding word line is a second level at which said corresponding memory cells go into a state wherein data input/output is performed, each of said plurality of first word-line control circuits switches to a non-conducting state.

2. A semiconductor memory device, as claimed in claim 1 , further comprising a plurality of second word-line control circuits respectively located at points other than both ends of said plurality of word lines, each of said plurality of second word-line control circuits receiving a signal level of a corresponding one of said plurality of word lines, wherein

in the case where the signal level of said corresponding word line is a first level at which corresponding ones of said plurality of memory cells connected to said corresponding word line go into a high impedance state, each of said plurality of second word-line control circuits switches to a conducting state and outputs a signal of said first level to said corresponding word line, and

in the case where the signal level of said corresponding word line is a second level at which said corresponding memory cells go into a state wherein data input/output is performed, each of said plurality of second word-line control circuits switches to a non-conducting state.

3. A semiconductor memory device, as claimed in claim 1 , wherein each of said first word-line control circuits comprises:

an inverter element that receives input of the signal level of said word line; and

a first word-line control element, coupled to said corresponding word line, that receives an output signal of said inverter element.

4. A semiconductor memory device, as claimed in claim 3 , wherein each of said first word-line control circuits further comprises a second word-line control element that

switches to a conducting state and outputs said first level of signal to said corresponding word line when a word-line initializing signal inputted at an initialization is inputted, and

switches to a non-conducting state when said word-line initializing signal is not inputted.

5. A semiconductor memory device, as claimed in claim 3 , wherein each of said plurality of first word-line control elements is formed of a MOS transistor having an inverse narrow width effect.

6. A semiconductor memory device as stated in claim 3 , wherein current driving capacity of said first word-line control element is smaller than current driving capacity of a corresponding one of said word-line drivers.

7. A semiconductor memory device, as claimed in claim 1 , wherein each of said plurality of first word-line control circuits comprises:

a logical circuit that receives inputs of a redundant selection signal indicating whether redundancy relief is performed or not and the signal level of said corresponding word line; and

a first word-line control element, coupled to said corresponding word-line, that receives an output signal of said logical circuit, wherein

in the case where said redundant selection signal indicates that redundancy relief is performed and the signal level of said corresponding word line is said first level, said first word-line control element switches to a conducting state and outputs a signal of said first level to said corresponding word line, and

in the case where said redundant selection signal indicates that redundancy relief is not performed or the signal level of said corresponding word line is said second level, said first word-line control element switches to a non-conducting state.

8. A semiconductor memory device, as claimed in claim 1 , wherein each of said plurality of first word-line control circuits comprises a word-line transfer element, controlled by a redundant selection signal indicating whether redundancy relief is performed or not, between said corresponding word line and an input/output terminal for receiving the signal level of said corresponding word line and outputting an output signal to said corresponding word line, wherein

in the case where said redundant selection signal indicates that redundancy relief is performed, said word-line transfer element switches to a conducting state and connects said input/output terminal to said corresponding word line, and

in the case where said redundant selection signal indicates that redundancy relief is not performed, said word-line transfer element disconnects said input/output terminal from said corresponding word line.

9. A semiconductor memory device, as claimed in claim 1 , wherein said plurality of first word-line control circuits are formed by using elements of dummy memory cells located around a memory cell array comprising said plurality of memory cells.