Structure of semiconductor element and its manufacturing process
View Patent ↗A semiconductor element includes a semiconductor substrate; a film of electrode material on the substrate at a thickness corresponding to the height of a pair of confronting electrodes standing vertical; a gap in the film of electrode material at a position so that confronting surfaces of the electrodes are formed as having a width corresponding to an interval of the confronting surfaces of the electrodes; and an insulating film in the gap. Then, a pair of confronting electrodes is formed by etching the film of electrode material. An intermediate film is formed on the pair of confronting electrodes; plugs are connected to the pair of confronting electrodes through the intermediate film; and finally wiring is connected to the plugs.
1. A structure of a semiconductor element comprising:
a substrate;
a pair of confronting electrodes having confronting surfaces standing vertical to a surface of said substrate;
a portion of an insulating film filled in a gap between said confronting surfaces of said pair of confronting electrodes;
an intermediate film on said pair of confronting electrodes;
plugs connected to said pair of confronting electrodes through said intermediate film; and
wiring connected to said plugs.
2. The structure of a semiconductor element according to claim 1 , wherein said pair of confronting electrodes are folded in a prescribed area on said substrate.
3. A structure of a semiconductor element comprising:
a substrate;
a pair of confronting electrodes having confronting surfaces standing vertical to a surface of said substrate;
a portion of an insulating film filled in a gap between said confronting surfaces of said pair of confronting electrodes,
wherein another portion of said insulating film is formed on upper surfaces of said pair of confronting electrodes.
4. The structure of a semiconductor element according to claim 3 , comprising:
an intermediate film on said pair of confronting electrodes;
plugs connected to said pair of confronting electrodes through said intermediate film; and
wiring connected to said plugs.
5. The structure of a semiconductor element according to claim 3 , wherein still another portion of said insulating film is formed on outer side walls of said pair of confronting electrodes.
6. The structure of a semiconductor element according to claim 5 , further comprising:
an intermediate film on said pair of confronting electrodes;
plugs connected to said pair of confronting electrodes through said intermediate film; and
wiring connected to said plugs.
7. A manufacturing process of a semiconductor element comprising the steps of:
providing a semiconductor substrate;
forming a film of electrode material on said substrate at a thickness corresponding to a height of a pair of confronting electrodes standing vertical with confronting surfaces thereof being vertical to a surface of said substrate;
forming said pair of confronting electrodes by etching said film of electrode material, simultaneously forming a gap in said film of electrode material at a position where said confronting surfaces of said pair of confronting electrodes are formed with width corresponding to an interval of said confronting surfaces of said pair of confronting electrodes; and
filling an insulating film in said gap, simultaneously forming an insulating film at upper surfaces and outer side walls of said pair of confronting electrodes.