Manufacturing method of semiconductor device
View Patent ↗When the occurrence of the bowing is controlled through the etching conditions, a change in etching conditions causes the bowing. Another problem is a requirement of the larger-sized apparatus for the substrate with a larger diameter in order to allow a whole substrate being subjected equally to the conditions under which no bowing occurs. In the present invention, a first etching is stopped at a depth where no bowing occurs to form an opening section. Next, a protective film for etching is formed on a region of the wall surface of the hole in the opening section where a bowing is liable to appear when an opening is formed further. After that, a second etching is carried out to form an opening further, and thereby a minute opening with an aspect ratio of 13 or higher is made, while suppressing the occurrence of the bowing well.
1. A method of manufacturing a semiconductor device to fabricate, by performing dry etching, an opening with an aspect ratio of not less than 13 in a first insulating film of an oxide of silicon which is formed on a basic substance so as to reach said basic substance; which comprises the steps of:
performing a first etching to form an opening section which reaches a depth where no bowing occurs in said first insulating film;
forming a sidewall made of a third insulating film, which has a lower etching rate than said first insulating film, to protect said wall surface wherein said sidewall covers at least a region on said wall surface of said opening section corresponding to an aspect ratio of 2 to 7 when the formation of said opening section is completed; and
performing a second etching to form an opening in said opening section by dry etching through at least the first insulating layer to reach a bottom film of a cylindrical capacitor.
2. A method of manufacturing a semiconductor device according to claim 1 , wherein said first etching is applied through an opening formed in a second insulating film formed on said first insulating film.
3. A method of manufacturing a semiconductor device according to claim 2 , wherein said first etching is stopped at an etching stopper layer formed within said first insulating film.
4. A method of manufacturing a semiconductor device according to one of claim 1 , wherein said first insulating film of a silicon oxide film is made of one selected from the group consisting of silicon oxide, silicon oxynitride, non-doped silicate glass, silicate glass containing at least either of boron and phosphorus and silicon oxide formed by sintering siloxane.
5. A method of manufacturing a semiconductor device according to one of claim 1 , wherein a second insulating film, said third insulating film and an etching stopper layer are each made of one selected from the group consisting of a polysilicon film, a silicon nitride film, a SiGe film and a Ge film.
6. A method of manufacturing a semiconductor device according to claim 1 , wherein an aspect ratio of said opening section is not less than 7 but not greater than 12.
7. A method of manufacturing a semiconductor device according to claim 1 , wherein said sidewall is made to remain on a wall surface of said opening.
8. A method of manufacturing a semiconductor device according to claim 1 , wherein, in the step of performing said third removal, said sidewall is removed by etching.
9. A method of manufacturing a semiconductor device according to claim 8 , wherein a film thickness of said sidewall is set thick enough to make the sidewall remain at least till said opening reaches said basic substrate.
10. A semiconductor device formed by a method of manufacturing a semiconductor device according to claim 1 .