Wide tuneable laser sources
View Patent ↗A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler. The method includes the steps of: using the same Multi-Quantum Well material for the Multi Quantum Well (MQW) sections of the tuneable lasers as well as for the Multi Quantum Well (MQW) amplifier, and using a common bulk material for the passive waveguides, the optical coupler and the DBR tuning sections of the lasers.
1. A method of manufacturing a tuneable laser assembly, the assembly including:
a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections, said lasers having respective emission wavelengths and tuning ranges such that said laser assembly can be tuned over a quasi-continuous predetermined wavelength range,
a plurality of passive waveguides coupled to said lasers to receive therefrom said respective emission wavelengths,
an optical coupler coupled to said waveguides to receive via said waveguides said emissions wavelengths from said lasers, and
an optical amplifier having a Multi Quantum Well (MQW) active section, said amplifier coupled to said optical coupler to amplify said emission wavelengths coupled via said optical coupler,
wherein the method includes the steps of:
using the same Multi-Quantum Well (MQW) material for the active sections of said tuneable lasers and said optical amplifier, and
using the same bulk material for said passive waveguides, said optical coupler and said DBR tuning sections of said lasers.
2. The method of claim 1 , including the steps of:
forming a MQW structure for the active sections of said lasers and said optical amplifier,
achieving integration of said active sections and said bulk material for said DBR tuning sections, said passive waveguides and said optical coupler.
3. The method of claim 2 , further including the step of forming after said integration said tuning sections and said passive waveguides.
4. The method of claim 1 , wherein said passive waveguides include a mesa structure and the method includes the step of forming a blocking layer around said mesa structure.
5. The method of claim 4 , wherein said blocking layer around said mesa structure is regrown via lateral regrowth.
6. The method of claim 1 , wherein said passive waveguides include a mesa structure and the method includes the step of forming layers on the top of the said mesa by means as a final regrowth operation.
7. The method of claim 1 , wherein said lasers, waveguides, optical coupler, and amplifier are integrally formed on said substrate.
8. The method of claim 1 , including the step of providing said amplifier with sufficient gain to enable said assembly to output light of substantially the same intensity as output by any one of said lasers.
9. The method of claim 1 , including the step of forming said optical coupler as a multimode interference coupler.
10. The method of claim 1 , including the step of forming said lasers in said plurality of lasers with peak emission wavelengths and tuning ranges so as to enable said assembly to emit any wavelength selected from said predetermined quasi-continuous wavelength range.
11. The method of claim 10 , wherein said predetermined quasi-continuous wavelength range covers the C transmission band.
12. The method of claim 10 , wherein said predetermined quasi-continuous wavelength range is from approximately 1523 nm to 1565 nm.
13. The method of claim 1 , including the steps of providing four lasers in said plurality of lasers.
14. The method of claim 13 , wherein said four lasers have Bragg wavelengths at zero tuning current of 1535 nm, 1545 nm, 1555 nm and 1565 nm, respectively.
15. A method of manufacturing a tuneable laser assembly, the assembly including:
a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections, said lasers having respective emission wavelengths and tuning ranges such that said laser assembly can be tuned over a quasi-continuous predetermined wavelength range,
a plurality of waveguides coupled to said lasers to receive therefrom said respective emission wavelengths,
an optical coupler coupled to said waveguides to receive via said waveguides said emissions wavelengths from said lasers, and
an optical amplifier having a Multi Quantum (MQW) active section, said amplifier coupled to said optical coupler to amplify said emission wavelengths coupled via said optical coupler,
wherein said lasers, waveguides, optical coupler, and optical amplifier are integrally formed on said substrate, wherein said substrate is a single substrate,
wherein the method includes the step of using the same Multi-Quantum Well (MQW) material for the active sections of said tuneable lasers and said optical amplifier.
16. The method of claim 14 , including the step of providing said amplifier with sufficient gain to enable said assembly to output light of substantially the same intensity as output by any one of said lasers.
17. The method of claim 14 , including the step of forming said optical coupler as a multimode interference coupler.
18. The method of claim 14 , including the step of forming said lasers in said plurality of lasers with peak emission wavelengths and tuning ranges so as to enable said assembly to emit any wavelength selected from said predetermined quasi-continuous wavelength range.
19. The method of claim 18 , wherein said predetermined quasi-continuous wavelength range covers the C transmission band.
20. The method of claim 18 , wherein said predetermined quasi-continuous wavelength range is from approximately 1523 nm to 1565 nm.
21. The method of claim 15 , including the step of providing four lasers in said plurality of lasers.
22. The method of claim 21 , wherein said four lasers have Bragg wavelengths at zero tuning current of 1535 nm, 1545 nm, 1555 nm and 1565 nm, respectively.
23. A method of manufacturing a tuneable laser assembly, the assembly including:
a substrate having formed thereon a plurality of tuneable lasers including distributed Bragg reflector (DBR) tuning sections, said lasers having respective emission wavelengths and tuning ranges such that said laser assembly can be tuned over a quasi-continuous predetermined wavelength range,
a plurality of passive waveguides coupled to said lasers to receive therefrom said respective emission wavelengths,
an optical coupler coupled to said waveguides to receive via said waveguides said emissions wavelengths from said lasers, and
an optical amplifier coupled to said optical coupler to amplify said emission wavelengths coupled via said optical coupler,
wherein the method comprises using the same bulk material for said passive waveguides, said optical coupler and said DBR tuning sections of said lasers.
24. The method of claim 23 , wherein said common bulk material is InGaAsP.
25. The method of claim 23 , including the steps of: forming a MQW active sections of said lasers and said optical amplifier, achieving integration of said active sections and said bulk material for said DBR tuning sections, said passive waveguides and said optical coupler.
26. The method of claim 25 , further including the step of forming after said integration said tuning sections and said passive waveguides.
27. The method of claim 23 , wherein said passive waveguides include a mesa structure and the method includes the step of forming a blocking layer around said mesa structure.
28. The method of claim 27 , wherein said blocking layer around said mesa structure is regrown via lateral regrowth.
29. The method of claim 23 , wherein said passive waveguides include a mesa structure and the method includes the step of forming layers on the top of the said mesa by means as a final regrowth operation.
30. The method of claim 23 , wherein said lasers, waveguides, optical coupler, and amplifier are integrally formed on said substrate.
31. The method of claim 23 , including the steps of providing said amplifier with sufficient gain to enable said assembly to output light of substantially the same intensity as output by any one of said lasers.
32. The method of claim 23 , including the steps of forming said optical coupler as a multimode interference coupler.
33. The method of claim 23 , including the step of forming said lasers in said plurality of lasers with peak emission wavelengths and tuning ranges so as to enable said assembly to emit any wavelength selected from said predetermined quasi-continuous wavelength range.
34. The method of claim 33 , wherein said predetermined quasi-continuous wavelength range covers the C transmission band.
35. The method of claim 33 , wherein said predetermined quasi-continuous wavelength range is from approximately 1523 nm to 1565 nm.
36. The method of claim 23 , including the step of providing four lasers in said plurality of lasers.
37. The method of claim 36 , wherein said four lasers have Bragg wavelengths at zero tuning current of 1535 nm, 1545 nm, 1555 nm and 1565 nm, respectively.