IP Library › Granted Patent US 7,118,964
Granted Patent B2
US 7,118,964 · App. 10/851,350 · Granted Oct 10, 2006

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

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Quick Facts
Patent No.
US 7,118,964
App. No.
10/851,350
Granted
Oct 10, 2006
Kind
B2
Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 13, 2014
From: RENESAS ELECTRONICS CORPORATION
To: TESSERA ADVANCED TECHNOLOGIES, INC.
Reel/Frame 032892/0212 →
MERGER Recorded Jul 30, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025204/0512 →