Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
View Patent ↗High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO 2 . In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is Ti x O y wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
1. A method of forming a titanium based layer, comprising:
providing a process gas between a conductive ceramic target and a substrate;
providing a pulsed DC power to the target such that the target voltage oscillates between positive and negative voltages;
providing a magnetic field to the target;
providing an RF bias power to the substrate;
providing filtering with a narrow band-rejection filter that rejects a frequency of the RF bias power coupled between a pulsed DC power supply and the target to protect the pulsed DC power supply from the RF bias power; and
depositing a layer of titanium containing oxide on the substrate.
2. The method of claim 1 , wherein the layer is TiO 2 .
3. The method of claim 2 , wherein the figure of merit of the layer is greater than 50.
4. The method of claim 2 , wherein the layer is deposited between conducting layers to form a capacitor.
5. The method of claim 2 , wherein the layer includes at least one rare-earth ion.
6. The method of claim 5 , wherein the layer is deposited between conducting layers to form a capacitor.
7. The method of claim 5 , wherein the at least one rare-earth ion includes erbium.
8. The method of claim 5 , wherein the layer is deposited between conducting layers to form a light-emitting device.
9. The method of claim 5 , wherein the layer is an optically active layer deposited on a light-emitting device.
10. The method of claim 5 , wherein the layer is an optically active layer applied to a light-emitting device.
11. The method of claim 1 , wherein the layer is a sub-oxide of Titanium.
12. The method of claim 11 , wherein the figure of merit of the layer is greater than 50.
13. The method of claim 11 , wherein the layer is deposited between conducting layers to form a capacitor.
14. The method of claim 11 , wherein the layer includes at least one rare-earth ion.
15. The method of claim 14 , wherein the layer is deposited between conducting layers to form a capacitor.
16. The method of claim 14 , wherein the at least one rare-earth ion includes erbium.
17. The method of claim 14 , wherein the layer is deposited between conducting layers to form a light-emitting device.
18. The method of claim 14 , wherein the layer is an optically active layer deposited on a light-emitting device.
19. The method of claim 14 , wherein the layer is an optically active layer applied to a light-emitting device.
20. The method of claim 2 , wherein the layer is a protective layer.
21. The method of claim 20 , wherein the protective layer is a catalytic layer.
22. The method of claim 20 , wherein the protective layer includes at least one rare-earth ion.
23. The method of claim 1 , wherein the layer is Ti x O y wherein x is between about 1 and about 4 and y is between about 1 and about 7.
24. The method of claim 23 , wherein the figure of merit of the layer is greater than 50.
25. The method of claim 23 , further including depositing an TiO 2 layer on the layer wherein the layer and the TiO 2 layers are deposited between conducting layers to form a capacitor with decreased roll-off characteristics with decreasing thickness of the TiO 2 layer.
26. The method of claim 23 , wherein the TiO 2 layer is an amorphous layer deposited by a pulsed DC, biased, reactive ion process.
27. The method of claim 23 , wherein the layer includes at least one rare-earth ion.
28. The method of claim 27 , wherein the at least one rare-earth ion includes erbium.
29. The method of claim 27 , wherein the layer is deposited between conducting layers to form a light-emitting device.
30. The method of claim 27 , wherein the layer is an optically active layer deposited on a light-emitting device.
31. The method of claim 27 , wherein the layer is an optically active layer applied to a light-emitting device.
32. The method of claim 23 , wherein the layer is a conducting oxide.
33. The method of claim 32 , wherein the substrate is a conducting electrode and the layer is a protective layer.
34. The method of claim 33 , wherein the protective layer is a catalytic layer.
35. The method of claim 33 , wherein the protective layer includes at least one rare-earth ion.
36. The method of claim 32 , wherein the substrate is a dielectric and the layer is a protective layer.
37. The method of claim 36 , wherein the protective layer is a catalytic layer.
38. The method of claim 1 , further including controlling the temperature of the substrate during deposition.
39. The method of claim 38 , wherein controlling the temperature includes active temperature control.
40. The method of claim 1 , wherein the layer is an amorphous layer.
41. The method of claim 1 , wherein the substrate includes a transistor structure.
42. A method of forming a titanium based layer, comprising:
providing a process gas between a conductive ceramic target and a substrate;
providing a pulsed DC power to the target such that the target voltage oscillates between positive and negative voltages;
providing a magnetic field to the target;
providing an RF bias power to the substrate;
providing a narrow band rejection filter at a frequency of the RF bias power; and
depositing a layer of titanium containing oxide on the substrate.