IP Library Granted Patent US 7,002,150
Granted Patent B2
US 7,002,150 · App. 10/854,868 · Granted Feb 21, 2006

Thin specimen producing method and apparatus

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Quick Facts
Patent No.
US 7,002,150
App. No.
10/854,868
Granted
Feb 21, 2006
Kind
B2
Abstract

A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.

Claims (15)

1. A thin specimen producing method comprising the steps of:

acquiring a work amount of a specimen in a one-line scan by a charged particle beam of a charged particle beam apparatus;

measuring a remaining work width of the specimen by a microscopic length-measuring function of the charged particle beam apparatus;

determining a required number of scan lines to reach a predetermined width by calculation; and

executing a work to obtain a set thickness.

2. A thin specimen producing method according to claim 1 , wherein the work amount of a specimen in one-line scan is obtained by working the specimen by scanning plural lines of the specimen, measuring a remaining work width of the specimen by a microscopic length-measuring function of the charged particle beam apparatus, and calculating an average work amount per one-line scan.

3. A thin specimen producing method according to claim 1 , wherein the microscopic length measurement executes, utilizing a microscope image by the charged particle beam or a monitoring microscope image, a pattern matching based on a drift correcting mark provided on a specimen surface, thereby measuring a specimen thickness of a finished surface in a designated part of the thin specimen.

4. A thin specimen producing method according to claim 1 , wherein a specimen thickness of a finished surface of the thin specimen is confirmed by a signal of electrons reflected or transmitted by a thin film under an electron beam irradiation, or of electron-induced X-rays.

5. A thin specimen producing apparatus comprising:

means for memorizing a thinning amount of a specimen in a one-line scan by a charged particle beam apparatus;

means for acquiring a microscope image of an upper surface of the specimen thereby automatically measuring a remaining width of the specimen in a thinning process;

means for calculating a required number of scan lines to reach a predetermined width based on the thinning amount per line and the remaining width of the specimen; and

means for executing the required number of scans by the charged particle beam apparatus.

6. A thin specimen producing apparatus according to claim 5 , further comprising an electron microscope apparatus functioning asynchronously with the charged particle beam apparatus, wherein a SEM image or a reflected electron image is sued as the microscope image.

7. A thin specimen producing apparatus according to claim 5 , further comprising electron beam irradiating means and means for detecting a signal of reflected or transmitted electrons or of electron-induced X-rays, the working thickness being confirmed by the detection signal.

Assignments (2)
CHANGE OF NAME Recorded Sep 25, 2014
From: SII NANOTECHNOLOGY INC.
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 033817/0078 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2005
From: IWASAKI, KOUJI; IKKU, YUTAKA
To: STI NANOTECHNOLOGY INC.
Reel/Frame 017329/0391 →