Use of a down-bond as a controlled inductor in integrated circuit applications
View Patent ↗A Radio Frequency (RF) device includes a semi conductive die and a package in which the semi conductive die mounts. The semi conductive die includes a first portion of an RF circuit and a plurality of die pads formed thereon. The package includes a heat slug upon which the semi conductive die resides, a plurality of package pins, a plurality of bond wires, a downbond rail, and a plurality of downbonds. Each of the bond wires couples between a corresponding die pad and a corresponding package pin. The downbond rail couples to the heat slug. At least one downbond couples between a die pad corresponding to the first portion of the RF circuit and a respective location on the downbond rail, serves as an inductor for a second portion of the RF circuit, may include a plurality of downbonds coupled in parallel, and has a length and/or a diameter selected to provide a desired inductance.
1. A Radio Frequency (RF) device comprising:
a semi conductive die having a first portion of an RF circuit and a plurality of die pads formed thereon; and
a package in which the semi conductive die mounts, the package including:
a heat slug upon which the semi conductive die resides;
a plurality of package pins;
a plurality of bond wires, each of which couples between a corresponding die pad and a corresponding package pin;
a downbond rail coupled to the heat slug; and
at least one downbond that couples between a die pad corresponding to the first portion of the RF circuit and a respective location on the downbond rail and that serves as an inductor for a second portion of the RF circuit.
2. The RF device of claim 1 , wherein the at least one downbond comprises a plurality of downbonds coupled in parallel between the die pad corresponding to the first portion of the RF circuit and respective locations on the downbond rail.
3. The RF device of claim 1 , wherein the at least one downbond has a length selected to provide a desired inductance.
4. The RF device of claim 1 , wherein the at least one downbond has a diameter selected to provide a desired inductance.
5. The RF device of claim 4 , wherein the at least one downbond has a length selected to provide a desired inductance.
6. The RF device of claim 1 , further comprising a switch operable to couple/decouple the at least one downbond from the first portion of the RF circuit.
7. The RF device of claim 6 , wherein the switch comprises an NMOS transistor.
8. The RF device of claim 7 , wherein the switch further comprises an DC blocking capacitor.
9. The RF device of claim 6 , wherein the switch comprises a PMOS transistor.
10. The RF device of claim 9 , wherein the switch further comprises an DC blocking capacitor.
11. A Radio Frequency (RF) circuit comprising:
a first portion formed on a semi conductive die and comprising:
a plurality of circuit components formed in/on the semi conductive die, the semi conductive die mounted in a package; and
a die pad formed on the semi conductive die and communicatively coupled to the plurality of circuit components; and
a second portion comprising:
a downbond rail of the package; and
at least one downbond that couples between the die pad and a respective location on the downbond rail and that serves as an inductor for a second portion of the RF circuit.
12. The RF circuit of claim 11 , wherein the at least one downbond comprises a plurality of downbonds coupled in parallel between the die pad and respective locations on the downbond rail.
13. The RF circuit of claim 11 , wherein the at least one downbond has a length selected to provide a desired inductance.
14. The RF circuit of claim 11 , wherein the at least one downbond has a diameter selected to provide a desired inductance.
15. The RF circuit of claim 14 , wherein the at least one downbond has a length selected to provide a desired inductance.
16. The RF circuit of claim 11 , further comprising a switch operable to couple/decouple the die pad from the plurality of circuit components formed in/on the semi conductive die.
17. The RF circuit of claim 16 , wherein the switch comprises an NMOS transistor.
18. The RF circuit of claim 17 , wherein the switch further comprises an DC blocking capacitor.
19. The RF circuit of claim 16 , wherein the switch comprises a PMOS transistor.
20. The RF circuit of claim 19 , wherein the switch further comprises an DC blocking capacitor.
21. A Radio Frequency (RF) device comprising:
a case;
a user interface;
an antenna;
an integrated circuit communicatively coupled to the antenna and to the user interface, the integrated circuit comprising:
a semi conductive die having a first portion of an RF circuit and a plurality of die pads formed thereon, the semi conductive die; and
a package in which the semi conductive die mounts, the package including:
a heat slug upon which the semi conductive die resides;
a plurality of package pins;
a plurality of bond wires, each of which couples between a corresponding die pad and a corresponding package pin;
a downbond rail coupled to the heat slug; and
at least one downbond that couples between a die pad corresponding to the first portion of the RF circuit and a respective location on the downbond rail and that serves as an inductor for a second portion of the RF circuit.
22. The RF device of claim 21 , wherein the at least one downbond comprises a plurality of downbonds coupled in parallel between the die pad corresponding to the first portion of the RF circuit and respective locations on the downbond rail.
23. The RF device of claim 21 , wherein the at least one downbond has a length selected to provide a desired inductance.
24. The RF device of claim 21 , wherein the at least one downbond has a diameter selected to provide a desired inductance.
25. The RF device of claim 24 , wherein the at least one downbond has a length selected to provide a desired inductance.
26. The RF device of claim 21 , further comprising a switch operable to couple/decouple the at least one downbond from the first portion of the RF circuit.
27. The RF device of claim 26 , wherein the switch comprises an NMOS transistor.
28. The RF device of claim 27 , wherein the switch further comprises an DC blocking capacitor.
29. The RF device of claim 26 , wherein the switch comprises a PMOS transistor.
30. The RF device of claim 29 , wherein the switch further comprises an DC blocking capacitor.
31. A differential circuit comprising:
a differential active portion that receives a differential RF signal and that operates upon the differential RF signal; and
a differential tuned portion coupled to the active portion having a first side and a second side, each side comprising:
a first inductor;
a downbond that serves as a second inductor; and
a switch coupled to the second inductor, wherein when the switch is open the second inductor couples with the first inductor and the tuned portion has first tuning characteristics, and wherein when the switch is closed the second inductor is decoupled from the first inductor and the tuned portion has second tuning characteristics.
32. The differential circuit of claim 31 , wherein the first inductor comprises a downbond.