Cascode amplifier structures including wide bandgap field effect transistor with field plates
View Patent ↗A multi-stage amplifier circuit arranged to take advantage of the desirable characteristics of non-field-plate and field plate transistors when amplifying a signal. One embodiment of a multi-stage amplifier according to the present invention comprises a non-field-plate transistor and a field-plate transistor. The field-plate transistor has at least one field plate arranged to reduce the electric field strength within the field plate transistor during operation. The non-field plate transistor is connected to the field plate transistor, with the non-field-plate providing current gain and the field plate transistor providing voltage gain. In one embodiment the non-field-plate and field plate transistors are coupled together in a cascode arrangement.
1. A multi-stage amplifier block, comprising:
a first stage transistor arranged to provide current gain; and
a second stage common gate transistor having a field plate, said first transistor coupled to said second transistor with said second transistor providing voltage gain,
wherein said field plate is electrically connected to the gate of said second transistor, said field plate at least partially overlapping said gate and extending toward the drain of said second transistor.
2. The amplifier block of claim 1 , wherein said field plate is arranged to reduce the electric field strength within said second transistor during operation.
3. The amplifier block of claim 1 , wherein said first stage transistor is common source configured.
4. The amplifier block of claim 1 , wherein said second stage transistor is common gate configured.
5. The amplifier of claim 1 , wherein the drain of said first stage transistor is connected to the source of said second stage transistor.
6. The amplifier of claim 1 , wherein the drain of said second stage transistor is the output of said amplifier block.
7. The amplifier of claim 1 , wherein the gate of said first stage transistor is the input to said amplifier block.
8. The amplifier of claim 1 , wherein the first stage transistor comprises a transistor from the group consisting of a high electron mobility transistor (HEMT) and a metal semiconductor field effect transistor (MESFET).
9. The amplifier of claim 1 , wherein said second stage transistor comprises a transistor from the group consisting of a high electron mobility transistor (HEMT) and a metal semiconductor field effect transistor (MESFET).
10. A multi-stage amplifier block, comprising:
a first stage transistor arranged to provide current gain;
a second stage transistor having a field plate, said first transistor coupled to said second transistor with said second transistor providing voltage gain,
wherein said field plate is electrically connected to the gate of said second transistor,
wherein said second stage transistor further comprises a passivation layer covering said gate, said field plate arranged on said passivation layer overlapping said gate and extending from the edge of the gate towards the drain contact.
11. A multistage amplifier block, comprising:
a first stage transistor arranged to provide current gain;
a second stage transistor having a field plate, said first transistor coupled to said second transistor with said second transistor providing voltage gain,
wherein said field plate is electrically connected to the gate of said second transistor,
wherein said second stage transistor comprises a HEMT having a channel layer and a barrier layer, and further comprises a spacer layer on the surface of said barrier layer with said barrier layer sandwiched between said channel and spacer layers, said gate passing through said spacer layer and contacting said barrier layer, and said field plate arranged on the surface of said spacer layer in contact with said gate.
12. A multistage amplifier block, comprising:
a first stage transistor arranged to provide current gain;
a second stage transistor having a field plate, said first transistor coupled to said second transistor with said second transistor providing voltage gain,
wherein said field plate is electrically connected to the gate of said second transistor,
wherein said second stage transistor comprises a HEMT having a channel layer and barrier layer, and said gate is gamma shaped and is in contact with said barrier layer, said HEMT further comprising a spacer layer that at least partially covers said gamma gate, said field plate arranged on said spacer layer and at least partially overlapping said gate.
13. A multi-stage amplifier block, comprising:
a first stage transistor arranged to provide current gain;
a second stage transistor having a field plate, said first transistor coupled to said second transistor with said second transistor providing voltage gain,
wherein said field plate is electrically connected to the gate of said second transistor,
wherein said second stage transistor comprises a MESFET having a channel layer, and further comprises a spacer layer on the surface of said channel layer, said gate passing through said spacer layer and contacting said barrier layer, and said field plate arranged on the surface of said spacer layer in contact with said gate.
14. A multi-stage amplifier, comprising:
a non-field-plate transistor; and
a field-plate transistor having at least one field plate arranged to reduce the electric field strength within said field plate transistor during operation, said nonfield plate transistor connected to said field plate transistor,
wherein said field plate at least partially overlaps the gate of said field-plate transistor and extends toward the drain of said field-plate transistor.
15. The amplifier of claim 14 , wherein said non-field-plate transistor is arranged to provide current gain to a signal and said field plate transistor is arranged to provide voltage gain to said signal.
16. The amplifier of claim 14 , wherein said non-field-plate is common source configured and said field plate transistor is common gate configured.
17. The amplifier of claim 14 , wherein said nonfield-plate transistor is arranged to accept a signal at its gate and provide a current amplified signal at its drain.
18. The amplifier of claim 17 , wherein said field plate transistor is arranged to accept said current amplified signal at its source and provide a voltage amplified signal at its drain.
19. The amplifier of claim 14 , wherein said non-fieldplate and field plate transistors are each a high electron mobility transistor (HEMT) or metal semiconductor field effect transistor (MESFET).
20. An amplifier circuit, comprising:
a first transistor having a common source configuration and arranged to accept a signal at its gate and provide a current amplified signal at its drain; and
a second transistor having a common gate configuration and arranged to accept said current amplified signal at its source and provide a voltage amplified signal at its drain, said second transistor comprising a field plate at least partially overlapping the gate of said second transistor and extending toward the drain of said second transistor.
21. The circuit of claim 20 , wherein said field plate is electrically connected to the gate of said second transistor.
22. The circuit of claim 20 , wherein said first transistor is substantially free of feedback capacitance and its gate input.
23. The circuit of claim 20 , wherein said second transistor is substantially free of feedback capacitance at its source input.