Method for making high-performance RF integrated circuits
View Patent ↗A new method and structure is provided for the creation of a semiconductor inductor. Under the first embodiment of the invention, a semiconductor substrate is provided with a scribe line in a passive surface region and active circuits surrounding the passive region. At least one bond pad is created on the passive surface of the substrate close to and on each side of the scribe line. A layer of insulation is deposited, a layer of dielectric is deposited over the layer of insulation, at least one bond pad is provided on the surface of the layer of dielectric on each side of the scribe line. At least one inductor is created on each side of the scribe line on the surface of the layer of dielectric. A layer of passivation is deposited over the layer of dielectric. The substrate is attached to a glass panel by interfacing the surface of the layer of passivation with the glass panel. The substrate is sawed from the backside of the substrate in alignment with the scribe line. The silicon that remains in place in the passive surface of the substrate underneath the scribe lines is removed by etching, the glass panel is separated along the scribe line. Under the second embodiment of the invention, the inductor is created on the surface of a thick layer of polymer that is deposited over the layer of passivation.
1. A semiconductor wafer comprising:
a semiconductor substrate;
an active-device region in or on said semiconductor substrate;
a dielectric layer over said semiconductor substrate and over said active-device region; and
a passive device over said dielectric layer, wherein the shortest distance between said passive device and a scribe line of said semiconductor wafer is less than that between said active-device region and said scribe line.
2. The semiconductor wafer of claim 1 further comprising a passivation layer over said semiconductor substrate, wherein said passive device is under said passivation layer.
3. The semiconductor wafer of claim 2 , wherein said passivation layer comprises silicon nitride.
4. The semiconductor wafer of claim 1 , wherein said passive device comprises an inductor.
5. The semiconductor wafer of claim 1 further comprising a bond pad over said semiconductor substrate, wherein the shortest distance between said passive device and said scribe line is less than that between said bond pad and said scribe line.
6. The semiconductor wafer of claim 1 further comprising a passivation layer over said semiconductor substrate, wherein said passive device is over said passivation layer.
7. The semiconductor wafer of claim 6 further comprising a polymer layer between said passive device and said passivation layer.
8. The semiconductor wafer of claim 7 , wherein said polymer layer comprises polyimide.
9. The semiconductor wafer of claim 6 further comprising a first interconnect line under said passivation layer and a second interconnect line over said passivation layer, wherein said first and second interconnect lines are connected to each other.
10. The semiconductor wafer of claim 1 , wherein said dielectric layer comprises silicon oxide.
11. A semiconductor wafer comprising:
a semiconductor substrate;
an active-device region in or on said semiconductor substrate; and
an inductor over said semiconductor substrate, wherein the shortest distance between said inductor and a scribe line of said semiconductor wafer is less than that between said active-device region and said scribe line.
12. The semiconductor wafer of claim 11 further comprising a passivation layer over said semiconductor substrate, wherein said inductor is under said passivation layer.
13. The semiconductor wafer of claim 12 , wherein said passivation layer comprises silicon nitride.
14. The semiconductor wafer of claim 11 further comprising a bond pad over said semiconductor substrate, wherein the shortest distance between said inductor and said scribe line is less than that between said bond pad and said scribe line.
15. The semiconductor wafer of claim 11 further comprising a passivation layer over said semiconductor substrate, wherein said inductor is over said passivation layer.
16. The semiconductor wafer of claim 15 further comprising a polymer layer between said inductor and said passivation layer.
17. The semiconductor wafer of claim 16 , wherein said polymer layer comprises polyimide.
18. The semiconductor wafer of claim 15 further comprising a first interconnect line under said passivation layer and a second interconnect line over said passivation layer, wherein said first and second interconnect lines are connected to each other.