Semiconductor micro-resonator for monitoring an optical device
View Patent ↗An optical device includes an optical waveguide through which light propagates and a micro-resonator structure including an optical sensor. The micro-resonator is configured to resonate at a wavelength of light that may be transmitted through the optical waveguide. When light at that wavelength is transmitted through the optical waveguide, it resonates in the resonator and is detected by the optical sensor to produce an electrical signal. The optical resonator may be a micro-cylinder, disc or ring resonator and may be coupled to the waveguide via evanescent coupling or leaky-mode coupling. Multiple resonators may be implemented proximate to the waveguide to allow multiple wavelengths to be detected. When the waveguide is coupled to a tunable laser, signals provided by the optical sensor may be used to tune the wavelength of the laser.
1. A tunable semiconductor laser system comprising:
a semiconductor laser, formed on a semiconductor substrate, including an optical gain medium having an index of refraction and an optical path length, the laser producing laser light at a predetermined wavelength;
tuning means, coupled to the substrate and responsive to a tuning signal to adjust one of the index of refraction and the optical path length of the optical gain medium to change the predetermined wavelength of the laser light;
a micro-resonator structure formed on the semiconductor substrate and optically coupled to the optical gain medium and including an optical sensor configured to provide an electrical output signal, wherein the micro-resonator is configured to resonate when light at a predetermined wavelength propagates through the optical gain medium and to provide the electrical output signal having a peak value in response to light at the predetermined wavelength; and
control circuitry coupled the micro-resonator and to the tuning means for providing the tuning signal in response to the output signal of the micro-resonator structure.
2. A tunable semiconductor laser system according to claim 1 , wherein the micro-resonator is a micro-cylinder.
3. A tunable semiconductor laser system according to claim 1 , wherein the micro-resonator is positioned with respect to the optical gain medium so that light propagating through the optical gain medium is received by the micro-resonator via evanescent coupling.
4. A tunable semiconductor laser system according to claim 3 , wherein each of the optical gain medium and the micro-resonator has a refractive index and the device further includes a cladding material positioned between the optical gain medium and the micro-resonator, the cladding material having an refractive index less than the refractive index of both the optical gain medium and the micro-resonator.
5. A tunable semiconductor laser system according to claim 1 , wherein the micro-resonator is physically coupled to the optical gain medium so that light propagating through the optical gain medium is received by the micro-resonator through leaky-mode coupling.
6. A tunable semiconductor laser system according to claim 1 , further including circuitry for applying a bias signal to the micro-resonator to cause the micro-resonator to resonate at a different wavelength.
7. A tunable semiconductor laser system according to claim 1 , further including means, for measuring an amount of optical power propagating through the optical gain medium to provide a power level signal.
8. A tunable semiconductor laser system according to claim 7 , wherein the means for measuring comprises a micro-structure, having a resonant length less than any wavelength of light that propagates through the optical gain medium.
9. A tunable semiconductor laser according to claim 7 , wherein the means for measuring comprises a micro-structure having a plurality of resonant modes such that light having wavelengths in a range of interest for the tunable semiconductor laser resonates in the micro-structure.
10. A tunable semiconductor laser system according to claim 8 , wherein the micro-structure is positioned with respect to the optical gain medium so that light propagating through the optical gain medium is received by the micro-structure via evanescent coupling.
11. A tunable semiconductor laser according to claim 8 , wherein the micro-structure is physically coupled to the optical gain medium so that light propagating through the optical gain medium is received by the micro-structure through leaky-mode coupling.