IP Library Granted Patent US 7,858,185
Granted Patent B2
US 7,858,185 · App. 10/860,332 · Granted Dec 28, 2010

High purity nanotube fabrics and films

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Quick Facts
Patent No.
US 7,858,185
App. No.
10/860,332
Granted
Dec 28, 2010
Kind
B2
Abstract

Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×10 18 atoms/cm 3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.

Claims (35)

1. A nanotube film comprising:

a solution-deposited network of connected and purified nanotubes on a substrate, wherein

the nanotubes form a film of substantially uniform porosity,

the film is free of amorphous carbon,

the film is free of polymer and surfactants,

the film comprises less than about 1×10 18 atoms/cm 2 of metallic impurities, and

the film is free of particle impurities having a diameter of greater than about 500 nm.

2. The nanotube film of claim 1 , wherein the film comprises less than about 15×10 10 atoms/cm 2 of metallic impurities.

3. The nanotube film of claim 1 , wherein the film comprises less than about 15×10 10 atoms/cm 2 of heavy metal impurities.

4. The nanotube film of claim 1 , wherein the film comprises less than about 15×10 10 atoms/cm 2 of group I and group II element impurities.

5. The nanotube film of claim 1 , wherein the film comprises less than about 15×10 10 atoms/cm 2 of transition metal impurities.

6. The nanotube film of claim 1 , wherein the film comprises less than about 1×10 18 atoms/cm 2 of heavy metal impurities.

7. The nanotube film of claim 1 , wherein the film comprises less than about 1×10 18 atoms/cm 2 of group I and group II element impurities.

8. The nanotube film of claim 1 , wherein the film comprises less than about 1×10 18 atoms/cm 2 of transition metal impurities.

9. The nanotube film of claim 1 , wherein the film is free of particle impurities having a diameter of greater than about 300 nm.

10. The nanotube film of claim 1 , wherein the nanotubes comprise conductive nanotubes.

11. The nanotube film of claim 1 , wherein the film comprises a mono-layer of nanotubes.

12. The nanotube film of claim 1 , wherein the film comprises a multilayer of nanotubes.

13. An assembly comprising

a substrate and a conductive element disposed on the substrate, wherein

the conductive element comprises a solution-deposited network of purified nanotubes having a substantially uniform porosity contacting other purified nanotubes to define a plurality of conductive pathways along the conductive element,

the conductive element is free of amorphous carbon,

the conductive element is free of polymer and surfactants,

the conductive element comprises less than 1×10 18 atoms/cm 2 of metal impurities and

the conductive element is free of particle impurities greater than about 500 nm.

14. The assembly of claim 13 , wherein the assembly comprises less than about 15×10 10 atoms/cm 2 of metal impurities.

15. The assembly of claim 13 , wherein the assembly comprises less than about 1×10 18 atoms/cm 2 of heavy metal impurities.

16. The assembly of claim 13 , wherein the assembly comprises less than about 15×10 10 atoms/cm 2 of heavy metal impurities.

17. The assembly of claim 13 , wherein the assembly comprises less than about 1×10 18 atoms/cm 2 of group I and group II element impurities.

18. The assembly of claim 13 , wherein the assembly comprises less than about 1×10 18 atoms/cm 2 of transition metal impurities.

19. The assembly of claim 13 , wherein the assembly comprises less than about 15×10 10 atoms/cm 2 of group I and group II element impurities.

20. The assembly of claim 13 , wherein the assembly comprises less than about 15×10 10 atoms/cm 2 of transition metal impurities.

21. The assembly of claim 13 , wherein the nanotubes comprise conductive nanotubes.

22. The assembly of claim 13 , wherein the assembly comprises a mono-layer of nanotubes.

23. The assembly of claim 13 , wherein the assembly comprises a multilayer of nanotubes.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2021
From: NANTERO, INC.
To: ZEON CORPORATION
Reel/Frame 056789/0932 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 8, 2021
From: SILICON VALLEY BANK
To: NANTERO, INC.
Reel/Frame 056790/0001 →
CONFIRMATORY LICENSE Recorded Apr 23, 2021
From: NANTERO, INC.
To: ZEON CORPORATION
Reel/Frame 056032/0549 →
CONFIRMATORY LICENSE Recorded Apr 23, 2021
From: NANTERO, INC.
To: ZEON CORPORATION
Reel/Frame 056032/0509 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Nov 11, 2020
From: NANTERO, INC.
To: SILICON VALLEY BANK
Reel/Frame 054383/0632 →
LICENSE Recorded Aug 20, 2008
From: NANTERO, INC.
To: LOCKHEED MARTIN CORPORATION
Reel/Frame 021411/0337 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 23, 2004
From: SEN, RAUL; SIVARAJAN, RAMESH; RUECKES, THOMAS; SEGAL, BRENT M.
To: NANTERO, INC.
Reel/Frame 015407/0286 →