Patent Assignment
Reel/Frame 054383/0632
Intellectual Property Security Agreement
Recorded: 2020-11-11
Pages: 51
Assignor
NANTERO, INC.
Executed: 2020-11-10
Assignee
SILICON VALLEY BANK
275 GROVE STREET, SUITE 2-200, NEWTON, MASSACHUSETTS, 02466
Covered Properties
(237)
Electromechanical Memory Array Using Nanotube Ribbons and Method for Making Same
Hybrid Circuit Having Nanotube Electromechanical Memory
Electromechanical Memory Having Cell Selection Circuitry Constructed with Nanotube Technology
Methods of Making Electromechanical Three-Trace Junction Devices
Electromechanical Three-Trace Junction Devices
Methods of Nanotube Films and Articles
Nanotube Films and Articles
Methods of Making Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles
Methods of Using Pre-Formed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles
Methods of Using Thin Metal Layers to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles
Hybrid Circuit Having Nanotube Electromechanical Memory
Device Selection Circuitry Constructed with Nanotube Technology
Nanotube Films and Articles
Devices Having Horizontally-Disposed Nanofabric Articles and Methods of Making the Same
Nanotube Films and Articles
Non-Volatile Ram Cell and Array Using Nanotube Switch Position for Information State
Four Terminal Non-Volatile Transistor Device
Methods of Making Electromechanical Three-Trace Junction Devices
Process for Making Bit Selectable Devices Having Elements Made with Nanotubes
Sensor Platform Using a Non-Horizontally Oriented Nanotube Element
Sensor Platform Using a Horizontally Oriented Nanotube Element
Method of Making an Applicator Liquid for Electronics Fabrication Process
High Purity Nanotube Fabrics and Films
Spin-Coatable Liquid for Formation of High Purity Nanotube Films
Applicator Liquid for Use in Electronic Manufacturing Processes
Applicator Liquid Containing Ethyl Lactate for Preparation of Nanotube Films
Field Effect Devices Having a Source Controlled via a Nanotube Switching Element
Non-Volatile Electromechanical Field Effect Devices and Circuits Using Same and Methods of Forming Same
Circuit Arrays Having Cells with Combinations of Transistors and Nanotube Switching Elements
Field Effect Devices Having a Gate Controlled via a Nanotube Switching Element
Method of Making Non-Volatile Field Effect Devices and Arrays of Same
Isolation Structure for Deflectable Nanotube Elements
Nanotube-Based Switching Elements
Nanotube-Based Switching Elements and Logic Circuits
Nanotube Device Structure and Methods of Fabrication
Patterned Nanowire Articles on a Substrate and Methods of Making the Same
Hybrid Circuit Having Nanotube Electromechanical Memory
Non-Volatile Electromechanical Field Effect Devices and Circuits Using Same and Methods of Forming Same
Methods of Nanotube Films and Articles
Methods of Nanotubes Films and Articles
Integrated Nanotube and Field Effect Switching Device
Receiver Circuit Using Nanotube-Based Switches and Transistors
Receiver Circuit Using Nanotube-Based Switches and Logic
Non-Tensioned Carbon Nanotube Switch Design and Process for Making Same
Patent:
7,928,521 →
Application:
11/142,725 →
Devices Having Vertically-Disposed Nanofabric Articles and Methods of Making the Same
Devices Having Vertically-Disposed Nanofabric Articles and Methods of Making the Same
Methods of Making Electromechanical Three-Trace Junction Devices
Devices Having Horizontally-Disposed Nanofabric Articles and Methods of Making the Same
Nanotube-Based Switching Elements with Multiple Controls
Light Emitters Using Nanotubes and Methods of Making Same
Resistive Elements Using Carbon Nanotubes
Random Access Memory Including Nanotube Switching Elements
Nanotube Esd Protective Devices and Corresponding Nonvolatile and Volatile Nanotube Switches
Nano Structure Electrode Design
Memory Arrays Using Nanotube Articles with Reprogrammable Resistance
Non-Volatile-Shadow Latch Using a Nanotube Switch
Two-Terminal Nanotube Devices and Systems and Methods of Making Same
Nanotube Fuse Structure
Aqueous Carbon Nanotube Applicator Liquids and Methods for Producing Applicator Liquids Thereof
Method of Aligning Nanotubes and Wires with an Etched Feature
Method of Aligning Deposited Nanotubes Onto an Etched Feature Using a Spacer
Hybrid Carbon Nanotube Fet(Cnfet)-Fet Static Ram (Sram) and Method of Making Same
Field Effect Device Having a Channel of Nanofabric and Methods of Making Same
Sensor Platform Using a Horizontally Oriented Nanotube Element
Sensor Platform Using a Non-Horizontally Oriented Nanotube Element
Nanotube Device Structure and Methods of Fabrication
Devices Having Vertically-Disposed Nanofabric Articles and Methods of Making the Same
Non-Volatile Electromechanical Field Effect Devices and Circuits Using Same and Methods of Forming Same
Nanotube-Based Switching Element
Device Selection Circuitry Constructed with Nanotube Technology
Nanotube-Based Switching Elements and Logic Circuits
Storage Elements Using Nanotube Switching Elements
Nanotube-Based Logic Driver Circuits
Method of Forming a Carbon Nanotube-Based Contact to Semiconductor
Non-Volatile Electromechanical Field Effect Devices and Circuits Using Same and Methods of Forming Same
Field Effect Devices Having a Gate Controlled via a Nanotube Switching Element
Sensor Platform Using a Non-Horizontally Oriented Nanotube Element
Latch Circuits and Operation Circuits Having Scalable Nonvolatile Nanotube Switches as Electronic Fuse Replacement Elements
Nonvolatile Resistive Memories Having Scalable Two-Terminal Nanotube Switches
Memory Elements and Cross Point Switches and Arrays of Same Using Nonvolatile Nanotube Blocks
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Device Selection Circuitry Constructed with Nanotube Ribbon Technology
Non-Volatile Electromechanical Field Effect Devices and Circuits Using Same and Methods of Forming Same
Random Access Memory Including Nanotube Switching Elements
Spin-Coatable Liquid for Formation of High Purity Nanotube Films
Spin-Coatable Liquid for Formation of High Purity Nanotube Films
Tri-State Circuit Using Nanotube Switching Elements
Isolation Structure for Deflectable Nanotube Elements
Integrated Nanotube and Field Effect Switching Devices
Nanotube-On-Gate Fet Structures and Applications
Electromechanical Memory Array Using Nanotube Ribbons and Method for Making Same
Circuit Arrays Having Cells with Combinations of Transistors and Nanotube Switching Elements
Bistable Latch Circuit Implemented with Nanotube-Based Switching Elements
Field Effect Devices Controlled via a Nanotube Switching Element
Devices Having Horizontally-Disposed Nanofabric Articles and Methods of Making the Same
Receiver Circuit Using Nanotube-Based Switches and Transistors
Receiver Circuit Using Nanotube-Based Switches and Logic
Hybrid Circuit Having Nanotube Memory Cells
Electromagnetic and Thermal Sensors Using Carbon Nanotubes and Methods of Making Same
Carbon Nanotube Resonators Comprising a Non-Woven Fabric of Unaligned Nanotubes
Nanotube Fabric-Based Sensor Systems and Methods of Making Same
Method and System of Using Nanotube Fabrics as Joule Heating Elements for Memories and Other Applications
Carbon Nanotubes for the Selective Transfer of Heat from Electronics
Resistive Elements Using Carbon Nanotubes
Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles
Two-Terminal Nanotube Devices Including a Nanotube Bridge and Methods of Making Same
Storage Elements Using Nanotube Switching Elements
Production of Carbon Nanotubes
Non-Volatile Shadow Latch Using a Nanotube Switch
Method of Fabricating a Patterned Nanoscopic Article
Methods of Making Electromechanical Three-Trace Junction Devices
Volatile Nanotube-Based Switching Elements with Multiple Controls
Nanotube-Based Switching Elements with Multiple Controls and Logic Circuits Having Said Elements
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Switching Materials Comprising Mixed Nanoscopic Particles and Carbon Nanotubes and Method of Making and Using the Same
Memory Arrays Using Nanotube Articles with Reprogrammable Resistance
Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same
Method of Making Sensor Platform Using a Non-Horizontally Oriented Nanotube Element
Method of Aligning Deposited Nanotubes Onto an Etched Feature Using a Spacer
Methods of Making Nanotube-Based Switching Elements and Logic Circuits
Nram Arrays with Nanotube Blocks, Nanotube Traces, and Nanotube Planes and Methods of Making Same
Integrated Nanotube and Field Effect Switching Devices
Method of Forming a Carbon Nanotube-Based Contact to Semiconductor
Nanotube Esd Protective Devices and Corresponding Nonvolatile and Volatile Nanotube Switches
Memory Elements and Cross Point Switches and Arrays of Same Using Nonvolatile Nanotube Blocks
Non-Volatile Electromechanical Field Effect Devices and Circuits Using Same and Methods of Forming Same
Microstrip Antenna Elements and Arrays Comprising a Shaped Nanotube Fabric Layer and Integrated Two Terminal Nanotube Select Devices
Anisotropic Nanotube Fabric Layers and Films and Methods of Forming Same
Anisotropic Nanotube Fabric Layers and Films and Methods of Forming Same
Nonvolatile Nanotube Programmable Logic Devices and a Nonvolatile Nanotube Field Programmable Gate Array Using Same
Nonvolatile Nanotube Programmable Logic Devices and a Nonvolatile Nanotube Field Programmable Gate Array Using Same
Nonvolatile Nanotube Programmable Logic Devices and a Nonvolatile Nanotube Field Programmable Gate Array Using Same
Nonvolatile Nanotube Programmable Logic Devices and a Nonvolatile Nanotube Field Programmable Gate Array Using Same
Nonvolatile Nanotube Programmable Logic Devices and a Nonvolatile Nanotube Field Programmable Gate Array Using Same
Integrated Three-Dimensional Semiconductor System Comprising Nonvolatile Nanotube Field Effect Transistors
Method of Aligning Nanotubes and Wires with an Etched Feature
Nanotube Device Structure and Methods of Fabrication
Method of Making a Nanotube-Based Shadow Random Access Memory
Non-Volatile Electromechanical Field Effect Devices and Circuits Using Same and Methods of Forming Same
Hybrid Carbon Nanotube Fet (Cnfet)-Fet Static Ram (Sram) and Method of Making Same
Dynamic Sense Current Supply Circuit and Associated Method for Reading and Characterizing a Resistive Memory Array
Aqueous Carbon Nanotube Applicator Liquids and Methods for Producing Applicator Liquids Thereof
Method for Resetting a Resistive Change Memory Element
Compact Electrical Switching Devices with Nanotube Elements, and Methods of Making Same
Two-Terminal Nanotube Devices and Systems and Methods of Making Same
Method for Adjusting a Resistive Change Element Using a Reference
Methods for Adjusting the Conductivity Range of a Nanotube Fabric Layer
Methods for Passivating a Carbonic Nanolayer
Carbon Nanotube-Based Neural Networks and Methods of Making and Using Same
Methods for Arranging Nanotube Elements Within Nanotube Fabrics and Films
Nanotube-Based Switching Elements and Logic Circuits
Methods of Making Nanotube Switches
Switching Materials Comprising Mixed Nanoscopic Particles and Carbon Nanotubes and Method of Making and Using the Same
Methods for Arranging Nanoscopic Elements Within Networks, Fabrics, and Films
Carbon Nanotubes for the Selective Transfer of Heat from Electronics
Two-Terminal Nanotube Devices and Systems and Methods of Making Same
Nanotube Solution Treated with Molecular Additive, Nanotube Film Having Enhanced Adhesion Property, and Methods for Forming the Nanotube Solution and the Nanotube Film
Spin-Coatable Liquid for Formation of High Purity Nanotube Films
Methods for Controlling Density, Porosity, and/or Gap Size Within Nanotube Fabric Layers and Films
Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same
Carbon Based Nonvolatile Cross Point Memory Incorporating Carbon Based Diode Select Devices and Mosfet Select Devices for Memory and Logic Applications
Nanotube Solutions with High Concentration and Low Contamination and Methods for Purifiying Nanotube Solutions
Electrostatic Discharge Protection Circuits Using Carbon Nanotube Field Effect Transistor (Cntfet) Devices and Methods of Making Same
Methods for Passivating a Carbonic Nanolayer
Scalable Nanotube Fabrics and Methods for Making Same
Switching Materials Comprising Mixed Nanoscopic Particles and Carbon Nanotubes and Methods of Making and Using the Same
Low Defect Nanotube Application Solutions and Fabrics and Methods for Making Same
Memory Elements and Cross Point Switches and Arrays for Same Using Nonvolatile Nanotube Blocks
Method for Dynamically Accessing and Programming Resistive Change Element Arrays
Methods for Passivating a Carbonic Nanolayer
Methods for Reading and Programming 1-R Resistive Change Element Arrays
Patent:
9,299,430 →
Application:
14/603,037 →
Two-Terminal Switching Device Using a Composite Material of Nanoscopic Particles and Carbon Nanotubes
Ddr Compatible Memory Circuit Architecture for Resistive Change Element Arrays
Patent:
9,412,447 →
Application:
14/812,173 →
Resistive Change Element Arrays Using Resistive Reference Elements
Methods of Forming Nanotube Films and Articles
Methods for Passivating a Carbonic Nanolayer
Non-Volatile Composite Nanoscopic Fabric Nand Memory Arrays and Methods of Making Same
1-R Resistive Change Element Arrays Using Resistive Reference Elements
Resistive Materials Comprising Mixed Nanoscopic Particles and Carbon Nanotubes
Methods for Enhanced State Retention Within a Resistive Change Cell
Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same
Circuits for Determining the Resistive States of Resistive Change Elements
Methods for Determining the Resistive States of Resistive Change Elements
Methods for Programming and Accessing Ddr Compatible Resistive Change Element Arrays
Cross Point Arrays of 1-R Nonvolatile Resistive Change Memory Cells Using Continuous Nanotube Fabrics
Memory Elements and Cross Point Switches and Arrays of Same Using Nonvolatile Nanotube Blocks
Methods for Arranging Nanoscopic Elements Within Networks, Fabrics and Films
Methods for Forming Nanotube Fabric Layers with Increased Density
Resistive Change Element Array Using Vertically Oriented Bit Lines
Low Porosity Nanotube Fabric Articles
Sealed Resistive Change Elements
Nanotube Solution Treated with Molecular Additive, Nanotube Film Having Enhanced Adhesion Property, and Methods for Forming the Nanotube Solution and the Nanotube Film
Nanotube Application Deposition System for Forming Low Defect Nanotube Fabrics
Application:
15/595,283 →
Publication:
US 2017/0246561
Methods for Error Correction with Resistive Change Element Arrays
Methods for Error Correction with Resistive Change Element Arrays
Microfluidic Control Surfaces Using Ordered Nanotube Fabrics
Storage and Delivery Systems for Colloidal Dispersions
Methods for Programming 1-R Resistive Change Element Arrays
Ddr Compatible Open Array Architectures for Resistive Change Element Arrays
Two-Terminal Switching Devices Comprising Coated Nanotube Elements
Nonvolatile Nanotube Switches and Systems Using Same
Resistive Change Element Arrays with in Situ Initialization
Devices and Methods for Accessing Resistive Change Elements in Resistive Change Element Arrays
Devices and Methods for Programming Resistive Change Elements
Stacked Three-Dimensional Arrays of Two Terminal Nanotube Switching Devices
Resistive Change Element Cells Sharing Selection Devices
Resistive Change Elements Incorporating Carbon Based Diode Select Devices
Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same
Ordered Nanotube Fabrics
Application:
16/101,071 →
Publication:
US 2018/0345316
Double Density Nonvolatile Nanotube Switch Memory Cells
Methods for Programming 1-R Resistive Change Element Arrays
Nonvolatile Nanotube Switches with Reduced Switching Voltages and Currents
Methods for Forming Crosspoint Arrays of Resistive Change Memory Cells
Methods for Accessing Resistive Change Elements in Resistive Change Element Arrays
Methods for Characterizing Nanotube Formulations for Nanotube Fabrics with Controlled Surface Roughness and Degree of Rafting
Methods for Forming Nanotube Fabrics with Controlled Surface Roughness and Degree of Rafting
Combinational Resistive Change Elements
Nonvolatile Nanotube Memory Arrays using Nonvolatile Nanotube Blocks and Cell Selection Transistors
Resistive Change Element Arrays Using a Reference Line
Methods of Making Sealed Resistive Change Elements
Non-Linear Resistive Change Memory Cells and Arrays
Devices for Programming Resistive Change Elements in Resistive Change Element Arrays
Methods for Forming Porous Nanotube Fabrics
Methods for Accessing 1-R Resistive Change Element Arrays
Nonvolatile Nanotube Switch Elements Using Sidewall Contacts
Protective Armor Using Ordered Nanotube Fabrics
Application:
16/846,715 →
Publication:
US 2021/0008591
Sense Amplifiers
Scalable Nanotube Fabrics and Methods for Making Same
Three-Dimensional Array Architecture for Resistive Change Element Arrays and Methods for Making Same
Electrostatic Discharge Protection Devices Using Carbon-Based Diodes
Resistive Change Elements Using Passivating Interface Gaps and Methods for Making Same
Methods for Programing Ddr Compatible Open Architecture Resistive Change Element Arrays
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Confirmatory License
Apr 23, 2021
From: NANTERO, INC.
To: ZEON CORPORATION
Reel/Frame 056032/0549 →
Assignment of Assignor's Interest
Jul 8, 2021
From: NANTERO, INC.
To: ZEON CORPORATION
Reel/Frame 056789/0932 →
Release of Security Interest in Patents
Jul 8, 2021
From: SILICON VALLEY BANK
To: NANTERO, INC.
Reel/Frame 056790/0001 →