Stacked three-dimensional arrays of two terminal nanotube switching devices
Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.
1. A three-dimensional nonvolatile memory array comprising:
a plurality of stacked nonvolatile memory sub-arrays, said sub-arrays including:
a plurality of bit line segments;
a plurality of word lines segments; and
a plurality of two terminal nanotube switching devices, each of said two terminal nanotube switching devices having:
a first conductive terminal in electrical communication with a bit line segment;
a nanotube fabric article disposed above and in electrical communication with said first conductive terminal; and
a second terminal disposed above and in electrical communication with said nanotube fabric article and in electrical communication with a word line segment;
wherein said nanotube fabric article is adjustable among at least two resistive states responsive to electrical stimuli applied across said first and second conductive terminals and wherein said resistive states correspond to informational states;
a plurality of word lines, each of said word lines in electrical communication with at least one word line segment within at least one sub-array;
a plurality of bit lines, each of said bit lines in electrical communication with at least one bit line segment within at least one sub-array; and
a memory operation circuit in electrical communication with said plurality of words lines and said plurality of bit lines, said memory operation circuit capable of addressing each two terminal nanotube switching device within said array through a combination of one of said plurality of word lines and one of said plurality of bit lines;
wherein said memory operation circuit includes elements capable of applying electrical stimuli to one or more selected two-terminal switching devices sufficient to adjust said one or more selected two-terminal switching devices from a first resistive state to a second resistive state; and
wherein said memory operation circuit includes elements capable of detecting a resistive state of one or more selected two-terminal switching devices.
2. The three-dimensional memory array of claim 1 wherein said at least two resistive states and said corresponding informational states are non-volatile.
3. The three-dimensional memory array of claim 1 wherein each of said plurality of sub-arrays is arranged such that said plurality of bit line segments are arranged parallel with respect to each other within a first plane, said plurality of word line segments are arranged parallel with respect to each other and orthogonal to said bit line segments in a second plane, and wherein said first plane and said second plane are parallel to each other and separated by a space containing said two-terminal nanotube switching devices.
4. The three-dimensional memory array of claim 3 where said first plane and said second plane are horizontal and separated by a vertical span.
5. The three-dimensional memory array of claim 4 wherein said plurality of word lines and plurality of bit lines are vertically oriented.
6. The three-dimensional memory array of claim 1 wherein said bit line segments and word line segments are electrically connected to said bit lines and word lines through insulator layers arranged around said sub-arrays.
7. The three-dimensional memory array of claim 6 wherein said electrical connection includes at least one stud via through at least one of said insulator layers.
8. The three-dimensional memory array of claim 1 wherein said word line segments are interconnected with support circuits.
9. The three-dimensional memory array of claim 1 wherein said plurality of word lines and plurality of bit lines provide electrical communication between said plurality of sub-arrays and one or more bit line drivers and one or more sense circuits within said memory operation circuit.
10. The three-dimensional memory array of claim 1 wherein said plurality of sub-arrays are arranged in a stack of layers, each layer situated directly above or below another layer.
11. The three-dimensional memory array of claim 10 wherein each layer contains only one sub-array.
12. The three-dimensional memory array of claim 10 wherein each layer includes multiple coplanar sub-arrays.
13. The three-dimensional memory array of claim 12 wherein sub-arrays within a single layer have no common bit line segments or word line segments.
14. The three-dimensional memory array of claim 10 wherein said array includes one of 2, 3, 4, 8, 16, 32, or 64 layers.
15. The three-dimensional memory array of claim 10 wherein said stack of layers provides high cell density within said array.
16. The three-dimensional memory array of claim 15 wherein cell density for said array is one of 4 F 2 per bit, 2 F 2 per bit, and 1 F 2 per bit.
17. The three-dimensional memory array of claim 1 wherein said three-dimensional memory forms a stand-alone memory.
18. The three-dimensional memory array of claim 1 wherein said three-dimensional memory is embedded within a logic chip.
19. The three-dimensional memory array of claim 1 wherein said three-dimensional memory is stacked above a microprocessor within a logic chip.
20. The three-dimensional memory array of claim 19 wherein said microprocessor has enhanced performance and low power requirements due to short vertically oriented address, timing, and data lines.